US3290175A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor photovoltaic devices
Assignee: General Electric Co
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Filing: 1962-07-06
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Granted: 1966-12-06
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Expires: 1982-07-06
Abstract
No abstract record available.
Inventors
- 👤 Dominic A Cusano
- 👤 Richard L Sormberger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:04
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/26; C; C03; C03C; C03C17/00; C03C17/06; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/32; H01; H01B; H01B1/00; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/18; H01J29/28; H01J9/00; H01J9/20; H01J9/22; H05B33/10; H10; H10F; H10F99/00; H10H; H10H20/00; H10H20/80; H10P; H10P10/00; H10P10/12; H10P95/00; C03C2217/00; C03C2217/20; C03C2217/25; C03C2217/251; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/072; Y10S148/12; Y10S148/169; Y10S428/00; Y10S428/913; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663; Y10T428/31678; Y10T428/31692; Y10T428/31696
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
111 words
A P-N JUNCTION STRUCTURE COMPRISING: FIRST AND SECOND CONTIGUOUS REGIONS OF A GROUP IIB-BIV COMPOUND, SAID FIRST REGION HAVING N-TYPE CONDUCTIVITY AND SAID SECOND REGION HAVING A CONDUCTIVITY TYPE IN THE RANGE FROM LESS N-TYPE THAN SAID FIRST REGION TO SLIGHTLY P-TYPE; AND A THIRD P-TYPE CONDUCTIVITY REGION OF A IB-VIB COMPOUND CONTIGUOUS WITH SAID SECOND REGION TO ESTABLISH A SMOOTH P-N JUNCTION REGION BETWEEN SAID IIB-VIB COMPOUND REGIONS AND SAID IB-VIB COMPOUND REGION SO THAT THE ELECTRICAL AND THERMAL CHARACTERISTICS OF THE JUNCTION CORRESPOND TO A P-N HETEROJUNCTION BETWEEN SAID IIB-VIB AND IB-VIB COMPOUNDS AND THE OPTICAL CHARACTERISTICS OF THE JUNCTION CORRESPOND TO A TRUE HOMOJUNCTION IN THE IIB-VIB COMPOUND.
Claim 2
Dependent Claim
111 words
A P-N JUNCTION STRUCTURE COMPRISING: FIRST AND SECOND CONTIGUOUS REGIONS OF A GROUP IIB-BIV COMPOUND, SAID FIRST REGION HAVING N-TYPE CONDUCTIVITY AND SAID SECOND REGION HAVING A CONDUCTIVITY TYPE IN THE RANGE FROM LESS N-TYPE THAN SAID FIRST REGION TO SLIGHTLY P-TYPE; AND A THIRD P-TYPE CONDUCTIVITY REGION OF A IB-VIB COMPOUND CONTIGUOUS WITH SAID SECOND REGION TO ESTABLISH A SMOOTH P-N JUNCTION REGION BETWEEN SAID IIB-VIB COMPOUND REGIONS AND SAID IB-VIB COMPOUND REGION SO THAT THE ELECTRICAL AND THERMAL CHARACTERISTICS OF THE JUNCTION CORRESPOND TO A P-N HETEROJUNCTION BETWEEN SAID IIB-VIB AND IB-VIB COMPOUNDS AND THE OPTICAL CHARACTERISTICS OF THE JUNCTION CORRESPOND TO A TRUE HOMOJUNCTION IN THE IIB-VIB COMPOUND.
Claim 3
Dependent Claim
96 words
A SEMICONDUCTOR PHOTOVOLTAIC DEVICE COMPRISING: FIRST AND SECOND CONTIGUOUS REGIONS OF A IIB-VIB COMPOUND, SAID FRIST REGION HAVING N-TYPE CONDUCTIVITY AND SAID SECOND REGION HAVING A CONDUCTIVITY TYPE IN THE RANGE FROM LESS N-TYPE THAN SAID FIRST REGION TO SLIGHTLY P-TYPE A THIRD REGION OF A IB-VIB COMPOUND OF A P-TYPE CONDUCTIVITY CONTIGUOUS WITH SAID SECOND REGION; A P-N JUNCTION REGION BETWEEN SAID IIB-VIB COMPOUND AND SAID IB-VIB COMPOUND; AND FIRST AND SECOND ELECTRICALLY CONDUCTIVE LAYERS IN DIRECT NON-RECTIFYING CONTACT WITH SAID FIRST N-TYPE CONDUCTIVITY GROUP IIB-VIB REGION AND SAID THIRD P-TYPE CONDUCTIVITY IB-VIB REGIONS, REPSECTIVELY.
Claim 4
Dependent Claim
96 words
A SEMICONDUCTOR PHOTOVOLTAIC DEVICE COMPRISING: FIRST AND SECOND CONTIGUOUS REGIONS OF A IIB-VIB COMPOUND, SAID FRIST REGION HAVING N-TYPE CONDUCTIVITY AND SAID SECOND REGION HAVING A CONDUCTIVITY TYPE IN THE RANGE FROM LESS N-TYPE THAN SAID FIRST REGION TO SLIGHTLY P-TYPE A THIRD REGION OF A IB-VIB COMPOUND OF A P-TYPE CONDUCTIVITY CONTIGUOUS WITH SAID SECOND REGION; A P-N JUNCTION REGION BETWEEN SAID IIB-VIB COMPOUND AND SAID IB-VIB COMPOUND; AND FIRST AND SECOND ELECTRICALLY CONDUCTIVE LAYERS IN DIRECT NON-RECTIFYING CONTACT WITH SAID FIRST N-TYPE CONDUCTIVITY GROUP IIB-VIB REGION AND SAID THIRD P-TYPE CONDUCTIVITY IB-VIB REGIONS, REPSECTIVELY.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-12-05 | 1970-06-06 | 1970-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-12-05 | 1974-06-06 | 1974-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-12-05 | 1978-06-06 | 1978-12-06 | $7700.00 | Window Closed / Lapsed |