US3121808A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature negative resistance device
Assignee: AT&T Inc
•
Filing: 1961-09-14
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Granted: 1964-02-18
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Expires: 1981-09-14
Abstract
No abstract record available.
Inventors
- 👤 Kahng Dawon
- 👤 George E Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:53
CPC Classifications
H; H10; H10P; H10P95/00; G; G11; G11C; G11C11/00; G11C11/21; G11C11/44; H10D; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
54 words
IN COMBINATION, A SEMICONDUCTOR WAFER INCLUDING FIRST AND SECOND REGIONS OF OPPOSITE CONDUCTIVITY TYPE DEFINING THEREBETWEEN A PN JUNCTION, SAID FIRST AND SECOND REGIONS HAVING SEPARATE DEGENERATE SURFACE PORTIONS, SEPARATE LOW RESISTANCE CONTACTS TO EACH SURFACE PORTION, MEANS CONNECTED TO SAID LOW RESISTANCE CONTACTS FOR FORWARD BIASING SAID JUNCTION AT ABOUT A BREAKDOWN VOLTAGE,
Claim 2
Dependent Claim
54 words
IN COMBINATION, A SEMICONDUCTOR WAFER INCLUDING FIRST AND SECOND REGIONS OF OPPOSITE CONDUCTIVITY TYPE DEFINING THEREBETWEEN A PN JUNCTION, SAID FIRST AND SECOND REGIONS HAVING SEPARATE DEGENERATE SURFACE PORTIONS, SEPARATE LOW RESISTANCE CONTACTS TO EACH SURFACE PORTION, MEANS CONNECTED TO SAID LOW RESISTANCE CONTACTS FOR FORWARD BIASING SAID JUNCTION AT ABOUT A BREAKDOWN VOLTAGE,
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-02-17 | 1967-08-19 | 1968-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-02-17 | 1971-08-19 | 1972-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-02-17 | 1975-08-19 | 1976-02-18 | $7700.00 | Window Closed / Lapsed |