US3974561A
Expired / Lapsed
US
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Method of producing directly heatable hollow semiconductor bodies
Assignee: Siemens AG
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Filing: 1974-05-30
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Granted: 1976-08-17
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Expires: 1994-05-30
Abstract
Abstract Hollow semiconductor bodies are formed from a gaseous phase by deposition on a heated mandrel and end zones of a so-produced body are doped so as to be conductive at room temperature.
Inventors
- 👤 Manfred Schnoeller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 06:48
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/12; C23; C23C; C23C16/00; C23C16/01; C23C16/22; C30B29/00; C30B29/02; C30B29/06; C30B29/10; C30B29/36; C30B31/02; C30B31/10; Y; Y10; Y10S; Y10S118/00; Y10S118/90; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49083
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
131 words
A method of producing a directly heatable hollow diffusion body composed of a semiconductor material comprising: forming a hollow body about a heated carrier member by a gas phase deposition process; removing the so-formed hollow body from the carrier member; coating select spaced-apart surface zones of said hollow body with a dopant-containing lacquer which includes sufficient dopant to provide a concentration greater than 10 20 atoms of dopant per cubic centimeter in the doped zones of the hollow body, said lacquer vaporizing without residue remaining on said zones; subjecting the so-coated body to diffusion conditions sufficient to diffuse said dopant into the coated zones of said body; and attaching current terminals to the doped zones of said body whereby current supply to said terminals heats the body directly to select temperatures.
Claim 2
Independent Claim
131 words
A method of producing a directly heatable hollow diffusion body composed of a semiconductor material comprising: forming a hollow body about a heated carrier member by a gas phase deposition process; removing the so-formed hollow body from the carrier member; coating select spaced-apart surface zones of said hollow body with a dopant-containing lacquer which includes sufficient dopant to provide a concentration greater than 10 20 atoms of dopant per cubic centimeter in the doped zones of the hollow body, said lacquer vaporizing without residue remaining on said zones; subjecting the so-coated body to diffusion conditions sufficient to diffuse said dopant into the coated zones of said body; and attaching current terminals to the doped zones of said body whereby current supply to said terminals heats the body directly to select temperatures.
Claim 3
Dependent Claim
12 words
A method as defined in claim 1 wherein said dopant is phosphorus.
Claim 4
Dependent Claim
14 words
A method as defined in claim 1 wherein said lacquer comprises a cellulose base.
Claim 5
Dependent Claim
17 words
A method as defined in claim 1 wherein said current terminals are composed of an aluminum material.
Claim 6
Dependent Claim
17 words
A method as defined in claim 4 wherein said current terminals are lined with a graphite felt.
Claim 7
Dependent Claim
21 words
A method as defined in claim 5 wherein said current terminals are associated with a heat-exchange means for cooling said terminals.
Claim 8
Independent Claim
151 words
A method of producing a directly heatable hollow body composed of a semiconductor material comprising: forming a hollow body about a heated carrier member by a gas phase deposition process from a thermally decomposable gaseous semiconductor compound yielding a highly pure semiconductor material selected from the group consisting of silicon and silicon carbide; removing the so-formed body from the carrier member; preparing a cellulose based lacquer containing an amount of phosphorus therein sufficient to provide a concentration greater than about 10 20 atoms of phosphorus per cubic centimeter of an applied area and applying said lacquer to spaced-apart ends zones of said body; subjecting the resultant body to diffusion conditions sufficient to vaporize said lacquer and diffuse phosphorus into the end zones of said body; and attaching current terminals to the doped end zones of said body whereby current applied to said terminals directly heats the body to a desired temperature.
Claim 9
Independent Claim
151 words
A method of producing a directly heatable hollow body composed of a semiconductor material comprising: forming a hollow body about a heated carrier member by a gas phase deposition process from a thermally decomposable gaseous semiconductor compound yielding a highly pure semiconductor material selected from the group consisting of silicon and silicon carbide; removing the so-formed body from the carrier member; preparing a cellulose based lacquer containing an amount of phosphorus therein sufficient to provide a concentration greater than about 10 20 atoms of phosphorus per cubic centimeter of an applied area and applying said lacquer to spaced-apart ends zones of said body; subjecting the resultant body to diffusion conditions sufficient to vaporize said lacquer and diffuse phosphorus into the end zones of said body; and attaching current terminals to the doped end zones of said body whereby current applied to said terminals directly heats the body to a desired temperature.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-17 | 1980-02-16 | 1980-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-17 | 1984-02-16 | 1984-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-17 | 1988-02-16 | 1988-08-17 | $7700.00 | Window Closed / Lapsed |