Use of vapor deposition to form a hollow tubular body closed on one end

Abstract

Abstract BODY IS COVERED BY A WAFER FROM THE SAME SEMICONDUCTOR MATERIAL WHOSE SHAPE CORRESPONDS TO THE OPEN SIDE. THEREAFTER, THE SEMICONDUCTOR MATERIAL IS PRECIPITATED FROM THE GASEOUS COMPOUND UNTIL THE DESIRED LAYER THICKNESS AND A GAS-TIGHT CONNECTION IS OBTAINED BETWEEN THE LAYER AND THE COVERING SEMICONDUCTOR MATERIAL. THE SECOND METHOD PRECIPITATES A SEMICONDUCTOR LAYER AND THEREAFTER WELDS A COVER ON THE TUBE. DESCRIBED ARE TWO METHODS OF PRODUCING A HOLLOW BODY, COMPRISED OF SEMICONDUCTOR MATERIAL, ESPECIALLY SILICON, BY PRECIPITATION FROM A GASEOUS COMPOUND OF SAID SEMICONDUCTOR MATERIAL UPON THE SURFACE OF A HEATED CARRIER BODY, WHICH AFTER A SUFFICIENTLY THICK LAYER OF SEMICONDUCTOR MATERIAL HAS BEEN PRECIPITATED, IS REMOVED AGAIN WITHOUT DAMAGING SAID LAYER. ONE METHOD IS CHARACTERIZED BY USING A HOLLOW CARRIER BODY, OPEN AT LEAST AT TWO OPPOSITE SIDES. PRIOR TO THE PRECIPITATION OF THE SEMICONDUCTOR MATERIAL, ONE OF THE OPEN SIDES OF THE CARRIER

Inventors

• 👤 K Reuschel
• 👤 A Kersting

Bibliographic Details