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US3965453A
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US
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Piezoresistor effects in semiconductor resistors
Assignee: AT&T Inc
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Filing: 1974-12-27
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Granted: 1976-06-22
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Expires: 1994-12-27
Abstract
Abstract In semiconductor integrated circuits, piezoresistance is recognized as a factor affecting production yield and circuit performance. Current flow in a circuit resistor is aligned with one of the <100> family of equivalent directions. When current is flowing along such a direction the change in resistance due to any combination of stress components is at a minimum. Additionally, variation of resistance due to stress and strain may be reduced by an increase of the total impurity concentration in a resistor.
Inventors
- 👤 Thomas Edward Seidel
- 👤 Masakazu Shoji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:51
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/50; H10D84/00; H10D84/201; H10D84/204; H10D84/209; H10D99/00; Y; Y10; Y10S; Y10S257/00; Y10S257/921
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
265 words
A semiconductor integrated circuit in a semiconductor body of a first conductivity type comprising an impurity zone of the second conductivity type in the semiconductor body for use as a resistor, and two ohmic contacts to the impurity zone so a line between the contacts stays within the boundaries of the impurity zone and is parallel to a <100> crystallographic direction of the semiconductor body, wherein the semiconductor is silicon, the first type conductivity is n-type and the second type conductivity is p-type, wherein a major surface of the silicon body is the (100) plane and the two ohmic contacts are on the (100) plane, wherein the impurity zone is generally rectangular and has a length greater than about two times the width, said circuit further comprising a plurality of impurity zones used as resistors wherein a majority of the impurity zones have two ohmic contacts to each impurity zone so a line between the contacts stays within the boundaries of the respective impurity zone and is parallel to a <100> crystallographic direction, wherein all of the impurity zones used as resistors have two ohmic contacts to each impurity zone so a line between the contacts stays within the boundaries of the respective impurity zone and is parallel to a <100> crystallographic direction, and wherein the impurity zone in the semiconductor body has a concentration of first type impurities less than the concentration of second type impurities, the ratio of concentrations being within the range of 0.1 to 0.99 and the sum of the concentrations being at least about 10 18 impurities per cubic centimeter.
Claim 2
Dependent Claim
265 words
A semiconductor integrated circuit in a semiconductor body of a first conductivity type comprising an impurity zone of the second conductivity type in the semiconductor body for use as a resistor, and two ohmic contacts to the impurity zone so a line between the contacts stays within the boundaries of the impurity zone and is parallel to a <100> crystallographic direction of the semiconductor body, wherein the semiconductor is silicon, the first type conductivity is n-type and the second type conductivity is p-type, wherein a major surface of the silicon body is the (100) plane and the two ohmic contacts are on the (100) plane, wherein the impurity zone is generally rectangular and has a length greater than about two times the width, said circuit further comprising a plurality of impurity zones used as resistors wherein a majority of the impurity zones have two ohmic contacts to each impurity zone so a line between the contacts stays within the boundaries of the respective impurity zone and is parallel to a <100> crystallographic direction, wherein all of the impurity zones used as resistors have two ohmic contacts to each impurity zone so a line between the contacts stays within the boundaries of the respective impurity zone and is parallel to a <100> crystallographic direction, and wherein the impurity zone in the semiconductor body has a concentration of first type impurities less than the concentration of second type impurities, the ratio of concentrations being within the range of 0.1 to 0.99 and the sum of the concentrations being at least about 10 18 impurities per cubic centimeter.
Claim 3
Dependent Claim
23 words
A semiconductor integrated circuit as recited in claim 1 wherein a boundary of the (100) plane is parallel to a <110> crystallographic direction.
Claim 4
Dependent Claim
116 words
A semiconductor integrated circuit in a semiconductor body of a first conductivity type comprising: an impurity zone of a second conductivity type in the semiconductor body for use as a resistor wherein the impurity zone in the semiconductor body has a concentration of first type impurities less than the concentration of second type impurities, the ratio of concentrations being within the range of 0.1 to 0.99 and the sum of the concentrations being at least about 10 18 impurities per cubic centimeter, and 2 ohmic contacts to the impurity zone so a line between the contacts stays within the boundaries of the impurity zone and is parallel to a <100> crystallographic direction of the semiconductor body.
Claim 5
Dependent Claim
116 words
A semiconductor integrated circuit in a semiconductor body of a first conductivity type comprising: an impurity zone of a second conductivity type in the semiconductor body for use as a resistor wherein the impurity zone in the semiconductor body has a concentration of first type impurities less than the concentration of second type impurities, the ratio of concentrations being within the range of 0.1 to 0.99 and the sum of the concentrations being at least about 10 18 impurities per cubic centimeter, and 2 ohmic contacts to the impurity zone so a line between the contacts stays within the boundaries of the impurity zone and is parallel to a <100> crystallographic direction of the semiconductor body.
Claim 6
Dependent Claim
61 words
A semiconductor integrated circuit in a semiconductor body as recited in claim 3 further comprising a plurality of impurity zones used as resistors wherein a majority of the impurity zones have 2 ohmic contacts to each impurity zone so a line between the contacts stays within the boundaries of the respective impurity zone and is parallel to a <100> crystallographic direction.
Claim 7
Dependent Claim
49 words
A semiconductor integrated circuit as recited in claim 4 wherein all of the impurity zones used as resistors have two ohmic contacts to each impurity zone so a line between the contacts stays within the boundaries of the respective impurity zone and is parallel to a <100> crystallographic direction.
Claim 8
Dependent Claim
44 words
A semiconductor integrated circuit as recited in claim 5 wherein a major surface of the semiconductor body is the (100) plane, the 2 ohmic contacts are on the (100) plane and a boundary of the semiconductor body is parallel to a <110> crystallographic direction.
Claim 9
Dependent Claim
117 words
A semiconductor integrated circuit in a semiconductor body of a first conductivity type comprising: an impurity zone of the second conductivity type in the semiconductor body for use as a resistor, and 2 ohmic contacts to the impurity zone so a line between the contacts stays within the boundaries of the impurity zone and is parallel to a < 100> crystallographic direction of the semiconductor body, wherein the impurity zone in the semiconductor body has a concentration of first type impurities less than the concentration of second type impurities, the ratio of concentrations being within the range of 0.1 to 0.99 and the sum of the concentrations being at least about 10 18 impurities per cubic centimeter.
Claim 10
Dependent Claim
117 words
A semiconductor integrated circuit in a semiconductor body of a first conductivity type comprising: an impurity zone of the second conductivity type in the semiconductor body for use as a resistor, and 2 ohmic contacts to the impurity zone so a line between the contacts stays within the boundaries of the impurity zone and is parallel to a < 100> crystallographic direction of the semiconductor body, wherein the impurity zone in the semiconductor body has a concentration of first type impurities less than the concentration of second type impurities, the ratio of concentrations being within the range of 0.1 to 0.99 and the sum of the concentrations being at least about 10 18 impurities per cubic centimeter.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-22 | 1979-12-22 | 1980-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-22 | 1983-12-22 | 1984-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-22 | 1987-12-22 | 1988-06-22 | $7700.00 | Window Closed / Lapsed |