Semiconductor strain sensitive devices

Claim 1

A SEMICONDUCTOR STRAIN SENSITIVE DEVICE COMPRISING: A MONOCRYSTALLINE BODY OF HIGH RESISTIVITY SEMICONDUCTIVE MATERIAL HAVING A FIRST PAIR OF LOW RESITIVITY ZONES IN THE SURFACE ADJACENT REGION OF ONE FACE AND A SECOND PAIR OF LOW RESISTIVITY ZONES IN THE SURFACE ADJACENT REGION OF THE OPPOSITE FACE, SAID FIRST PAIR OF LOW RESISTIVITY ZONES ON ONE FACE DEFINING TWO OPPOSITE PORTIONS OF A FOUR PORTION CLOSED FIGURE AND THE SECOND PAIR OF LOW RESISTIVITY ZONES ON THE OPPOSITE FACE DEFINING THE OTHER TWO OPPOSITE PORTIONS OF SAID CLOSED FIGURE, THE HIGH RESISTANCE OF SAID BODY PROVIDING ELECTRICAL ISOLATION OF SAID ZONES IN SAID BODY; MEANS FOR MAKING ELECTRICAL CONNECTIONS TO THE RESPECTIVE END PORTIONS OF THE LOW RESISTIVITY ZONES ON OPPOSITE FACES OF SAID BODY TO FORM A COMPLETE UNITARY BRIDGE CIRCUIT, THE CRYSTALLOGRAPHIC ORIENTATION OF THE MONOCRYSTALLINE BODY AND THE IMPURITY CONCENTRATION AND CONDUCTIVITY-TYPE OF THE LOW RESISTIVITY ZONES ESTABLISHED THEREIN BEING SELECTED TO PROVIDE SAID FIRST AND SECOND PAIRS OF LOW RESISTIVITY ZONES WITH ELASTORESISTANCE COEFFICIENTS ADAPTED TO PROVIDE A MAXIMUM UNBALANCE OF SAID BRIDGE CIRCUIT FOR A GIVEN APPLIED FORCE.