Semiconductor heterojunction television imaging tube

Claim 1

An electron tube device comprising in combination: a target structure comprising: a substrate of semiconductor material comprising N-doped silicon; a layer of dielectric material selected from the group consisting of antimony trisulphide and amorphous silicon doped with boron containing approximately 1% boron and silicon dioxide containing approximately 1% boron, said layer having a thickness in the range of 100 A to 10,000 A, said dielectric material being of substantially greater resistivity than said substrate; and a conductive layer comprising tin oxide contiguous to said layer of semiconductor material, said conductive layer being substantially transparent, and said layer being disposed upon the side of said substrate opposite said dielectric layer; means for providing a beam of electrons; means for focusing said beam of electrons; means for directing said beam of electrons towards selected positions upon said dielectric layer; means for controlling the amount of current flow in said electron beam; a semiconductor charge carrier multiplier, said multiplier being positioned between said means for providing said beam of electrons and said target structure; and an evacuated envelope containing said target structure, said means for providing a beam of electrons, said focusing means, and said directing means.