US3585430A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide phosphide camera tube target having a semi-insulating layer on the scanned surface
Assignee: RCA Corp
•
Filing: 1968-08-23
•
Granted: 1971-06-15
•
Expires: 1988-08-23
Abstract
Abstract A continuous barrier single crystal GaAs1 xPx vidicon target is provided with a thin semi-insulating layer of antimony trisulfide on its scanned side to prevent higher energy beam electrons from traveling through the barrier to a signal plate as dark current.
Inventors
- 👤 Ralph E Simon
- 👤 Robert L Rodgers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:26
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/456; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
30 words
A target as claimed in claim 1 and wherein said wafer consists essentially of gallium arsenide phosphide semiconductor alloy having a donor density of about 1015 donors per cubic centimeter.
Claim 2
Dependent Claim
66 words
continuous P-conductivity-type region at the other major surface scanned by an electron beam, that region being P-conductivity type because of the presence of surface states in the region; and b. a layer of semi-insulating material on the P-conductivity-type region surface, said layer having a thickness of less than about 2 microns and a resistivity on the order of from about 108 ohm-cm to about 109 ohm-cm.
Claim 3
Dependent Claim
89 words
a second continuous region, including at least a portion of said first face of said target, said second region being doped lightly N-type and exhibiting P-type surface state properties at said first face of said target; and b. a thin layer of semi-insulating material on said first face of said target toward said scanning beam, c. said semi-insulating layer acting to thermalize electrons impinging on it when scanned by said electron beam and preventing said electrons from traveling through said second region to said first region as dark current.
Claim 4
Dependent Claim
29 words
A target as claimed in claim 1 and wherein said wafer consists essentially of gallium arsenide phosphide semiconductor alloy having a band gap between one and 3 electron volts.
Claim 5
Dependent Claim
15 words
A target as claimed in claim 1 and wherein said semi-insulating material is antimony trisulfide.
Claim 6
Dependent Claim
47 words
A target for a vidicon-type camera tube having a thin target, a first face of which is toward a scanning electron beam while a second face has light incident on it, said target comprising: a. an epitaxial single crystal wafer of gallium arsenide phosphide semiconductor material having:
Claim 7
Dependent Claim
26 words
A target as claimed in claim 5 and in which said crystal wafer is of a material having a band gap of about 1.8 electron volts.
Claim 8
Dependent Claim
30 words
A target as claimed in claim 5 and in which said crystal wafer is of gallium arsenide phosphide semiconductor alloy which has a band gap of about 1.8 electron volts.
Claim 9
Dependent Claim
17 words
A target as claimed in claim 5 and in which said semi-insulating layer is of antimony trisulfide.
Claim 10
Dependent Claim
76 words
A semiconductor vidicon-type camera tube target comprising a single crystal target electrode of N-conductivity-type gallium arsenide phosphide, said target electrode having at its scanned face a continuous P-conductivity-type surface state region and having on said scanned surface a thin layer of semi-insulating material with a resistivity of between about 108 ohm-cm and 109 ohm-cm which acts to thermalize electrons impinging on said face and to prevent those electrons from traveling through said target as dark current.
Claim 11
Dependent Claim
25 words
A target as claimed in claim 9 and in which said target electrode is of material having a band gap of about 1.8 electron volts.
Claim 12
Dependent Claim
17 words
A target as claimed in claim 9 and in which said semi-insulating layer is of antimony trisulfide.
Claim 13
Dependent Claim
51 words
A target for a vidicon-type camera tube comprising: a. a photoconductive single crystal wafer of gallium arsenide phosphide semiconductor material, being lightly doped N-conductivity type in its bulk to a doping level of less than 1015 donors/cm3 and being from about 3 microns to about 10 microns thick, saId wafer having,
Claim 14
Dependent Claim
36 words
A target for a vidicon-type camera tube as claimed in claim 12 and wherein said wafer is of gallium arsenide phosphide material having a bandgap of from about 1.6 electron volts to about 2 electron volts.
Claim 15
Dependent Claim
34 words
A target for a vidicon type camera tube as claimed in claim 12 and wherein said wafer is doped in its bulk to a level of from about 1014 donors/cm3 to about 1015 donors/cm3.
Claim 16
Dependent Claim
34 words
A target for a vidicon-type camera tube as claimed in claim 12 and wherein said layer of semi-insulating material is a layer of antimony trisulfide having a thickness on the order of 1 micron.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-14 | 1974-12-14 | 1975-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-14 | 1978-12-14 | 1979-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-14 | 1982-12-14 | 1983-06-15 | $7700.00 | Window Closed / Lapsed |