Patent US3964090A successfully refreshed from Google Patents.
US3964090A
Expired / Lapsed
US
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Semiconductor controlled rectifier
Assignee: Semikron GmbH and Co KG
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Filing: 1974-06-20
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Granted: 1976-06-15
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Expires: 1994-06-20
Abstract
Abstract A semiconductor controlled rectifier, having a semiconductor body with at ast four zones of alternatingly opposite conductivity types, includes a highly doped outer emitter zone of a first conductivity type and a bordering weakly doped inner zone of an opposite conductivity type. The outer emitter zone is formed so as to have a plurality of sections. Portions of the inner zone extend up to the level of the outer surface of the emitter zone between the sections of the emitter zone. These portions of the inner zone are interconnected and bar shaped. The inner zone, therefore, forms a contiguous geometric pattern on the outer surface. A conductive coating is placed on the outer surface and serves as a contact electrode for the rectifier.
Inventors
- 👤 Gunter Jakob
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:43
CPC Classifications
H; H10; H10D; H10D99/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
243 words
In a semiconductor controlled rectifier having a semiconductor body with a planar outer surface and at least four zones of alternatingly opposite conductivity types including an outer highly doped emitter zone of a first conductivity type at said outer surface and an adjacent inner weakly doped zone of the opposite conductivity bordering the outer emitter zone and having a first portion which extends to said outer surface adjacent said emitter zone and further portions which extend through said outer emitter zone up to said outer surface completely within the perimeter of said emitter zone at said outer surface, said first portion being separated from said further portions at said outer surface by said emitter zone, a control electrode disposed on said outer surface and contacting said first portion of said weakly doped inner zone, and a conductive coating disposed on said outer surface over said emitter zone and serving as a single emitter contact electrode, said single contact electrode being directly connected to said emitter zone and only said further portions of said inner zone so as to form a shorted emitter, the improvement wherein said further portions of said weakly doped inner zone which extend to said outer surface through said emitter zone comprise a plurality of interconnected bar-shaped sections, which are elongated in the plane of said outer surface, and which form a connected geometric pattern at said outer surface, whereby a controlled rectifier with an improved dv/dt behavior is achieved.
Claim 2
Dependent Claim
243 words
In a semiconductor controlled rectifier having a semiconductor body with a planar outer surface and at least four zones of alternatingly opposite conductivity types including an outer highly doped emitter zone of a first conductivity type at said outer surface and an adjacent inner weakly doped zone of the opposite conductivity bordering the outer emitter zone and having a first portion which extends to said outer surface adjacent said emitter zone and further portions which extend through said outer emitter zone up to said outer surface completely within the perimeter of said emitter zone at said outer surface, said first portion being separated from said further portions at said outer surface by said emitter zone, a control electrode disposed on said outer surface and contacting said first portion of said weakly doped inner zone, and a conductive coating disposed on said outer surface over said emitter zone and serving as a single emitter contact electrode, said single contact electrode being directly connected to said emitter zone and only said further portions of said inner zone so as to form a shorted emitter, the improvement wherein said further portions of said weakly doped inner zone which extend to said outer surface through said emitter zone comprise a plurality of interconnected bar-shaped sections, which are elongated in the plane of said outer surface, and which form a connected geometric pattern at said outer surface, whereby a controlled rectifier with an improved dv/dt behavior is achieved.
Claim 3
Dependent Claim
40 words
A semiconductor controlled rectifier as defined in claim 1 wherein said interconnected bar-shaped sections are arranged so that said geometrical pattern is in the form of a comb with the legs thereof extending in a direction toward said control electrode.
Claim 4
Dependent Claim
52 words
A semiconductor controlled rectifier as defined in claim 1 wherein said interconnected bar-shaped sections are arranged so that said geometrical pattern is in the shape of a star with each of said bar-shaped sections emanating from a common point and extending from said common point in a direction toward said control electrode.
Claim 5
Dependent Claim
53 words
A semiconductor controlled rectifier as defined in claim 1 wherein said interconnected bar-shaped sections are arranged so that said geometrical pattern is in the form of a pine-tree-arrangement wherein a plurality of said bar-shaped sections emanates from a central one of said bar-shaped sections which extends in a direction toward said control electrode.
Claim 6
Dependent Claim
61 words
A semiconductor controlled rectifier as defined in claim 1 wherein: said emitter zone has an annular shape at said outer surface; said first portion of said weakly doped inner zone is in the center of said annular shape; and said interconnected bar-shaped sections are arranged so that said geometrical pattern is in the shape of a ring with inwardly extending strokes.
Claim 7
Dependent Claim
42 words
A semiconductor controlled rectifier as defined in claim 1 wherein said geometrical pattern is such that the portions of said emitter zone between said further portions of said inner weakly doped zone are all open in a direction toward said control electrode.
Claim 8
Dependent Claim
28 words
A semiconductor controlled rectifier as defined in claim 6 wherein said interconnected bar-shaped sections are arranged so that said geometrical pattern is in the form of a meander.
References Cited (Backward Citations)
GB935710A
Cited
DE1261603B
Cited
US3350611A
Cited
US3633271A
Cited
US3566210A
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US3619738A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-15 | 1979-12-15 | 1980-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-15 | 1983-12-15 | 1984-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-15 | 1987-12-15 | 1988-06-15 | $7700.00 | Window Closed / Lapsed |