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US3633271A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor devices

Assignee: Siemens Mobility Ltd
•
Filing: 1968-07-15
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Granted: 1972-01-11
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Expires: 1988-07-15
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Abstract

Abstract A multijunction, multilayer semiconductor device is formed by alloying the surface of a body of semiconductor material with a material which contains an impurity and includes gaps or perforations therein so that an emitter zone is formed in the body which includes corresponding perforations therein into which project or extend portions of the zone adjacent the emitter zone. The exposed surfaces of the adjacent zones which project into the emitter zone are abraded.

Inventors

  • 👤 Clifford Victor Miles
  • 👤 John M Garrett

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 18:18
CPC Classifications
H; H10; H10P; H10P10/00; H10D; H10D99/00; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/904; Y10S438/959

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 41 words
A method as claimed in claim 1, wherein the emitter zone has therein a plurality of such gaps, the surface of the body at least where said first zone lies in each of the gaps of the emitter zone being abraded.
Claim 2
Dependent Claim 18 words
A method as claimed in claim 2, wherein the number of such gaps is in excess of 30.
Claim 3
Dependent Claim 17 words
A method as claimed in claim 3, wherein the number of gaps lies between 30 and 100.
Claim 4
Dependent Claim 22 words
A method a claimed in claim 2, wherein the gaps are uniformly distributed over the area of said surface of the body.
Claim 5
Dependent Claim 27 words
A method as claimed in claim 2, wherein the total area of the gaps represents between 2.5 and 25 percent of the total area of the surface.
Claim 6
Dependent Claim 34 words
A method as claimed in claim 2, wherein the abrading is effected by sandblasting of said first zone where the said first zone lies in the at least one gap of the emitter zone.
Claim 7
Dependent Claim 49 words
A method as claimed in claim 1, wherein the at least one gap in the emitter zone is formed by the layer being a preperforated layer such that when the layer is alloyed to the body, the perforation in the layer forms the corresponding gap in the emitter zone.
Claim 8
Dependent Claim 60 words
A method as claimed in claim 1, wherein there is subsequently applied an electrically conductive layer of a second material which layer makes ohmic contact with both said first-mentioned layer and said first zone where said first zone lies in the at least one gap in the emitter zone so as electrically interconnect said first-mentioned layer and said first zone.

References Cited (Backward Citations)

US2973569A Cited
US3336160A Cited
US3366851A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-01-10 1975-07-12 1976-01-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-01-10 1979-07-12 1980-01-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-01-10 1983-07-12 1984-01-11 $7700.00 Window Closed / Lapsed

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