Patent US3962000A successfully refreshed from Google Patents.
US3962000A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Barium aluminoborosilicate glass-ceramics for semiconductor doping
Assignee: OI Glass Inc
•
Filing: 1974-12-20
•
Granted: 1976-06-08
•
Expires: 1994-12-20
Abstract
Abstract Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B 2 O 3 from a solid B 2 O 3 source to the semiconductor, wherein the solid B 2 O 3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain barium aluminoborosilicate parent glass compositions which in mole percent consist essentially of over 40 and up to 60 SiO 2 , 10 to 30 Al 2 O 3 , 20 to 40 B 2 O 3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO.
Inventors
- 👤 James E. Rapp
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:12
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; C03; C03C; C03C10/00; C03C10/0036; C03C3/00; C03C3/04; C03C3/062; C03C3/064; H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P32/19; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
144 words
In the process doping a semiconductor wherein a semiconductor and a glass-ceramic dopant host for vapor phase transport of B 2 O 3 are maintained in vapor phase communication at a temperature and for a time sufficient to form a zone of P-type conductivity in said semiconductor, the improvement comprising using a glass-ceramic dopant host which has been formed by the in-situ thermal crystallization of a barium alumino borosilicate parent glass composition containing less than about 0.5 mol percent of alkali metal oxides and consisting essentially of:Components Mole %SiO 2 40<to 60Al 2 O 3 10 to 30B 2 O 3 20 to 40BaO 1 to 15Alkaline earth 3 to 20oxides selectedfrom the groupconsisting of BaO,MgO, CaO, SrO, andmixtures thereof Al 2 O 3 Wherein 4 ≧ ≧ 1.5 Alkaline earth oxides Wherein the BaO content is about 1-15 mole % of said composition.
Claim 2
Dependent Claim
144 words
In the process doping a semiconductor wherein a semiconductor and a glass-ceramic dopant host for vapor phase transport of B 2 O 3 are maintained in vapor phase communication at a temperature and for a time sufficient to form a zone of P-type conductivity in said semiconductor, the improvement comprising using a glass-ceramic dopant host which has been formed by the in-situ thermal crystallization of a barium alumino borosilicate parent glass composition containing less than about 0.5 mol percent of alkali metal oxides and consisting essentially of:Components Mole %SiO 2 40<to 60Al 2 O 3 10 to 30B 2 O 3 20 to 40BaO 1 to 15Alkaline earth 3 to 20oxides selectedfrom the groupconsisting of BaO,MgO, CaO, SrO, andmixtures thereof Al 2 O 3 Wherein 4 ≧ ≧ 1.5 Alkaline earth oxides Wherein the BaO content is about 1-15 mole % of said composition.
Claim 3
Dependent Claim
60 words
The process of claim 1 wherein said glass-ceramic dopant wafer consists essentially of: Component Mole %
SiO.sub.2 40 < to 55
Al.sub.2 O.sub.3 10 to 30
B.sub.2 O.sub.3 20 to 40
BaO 3 to 15
Alkaline earth 5 to 15
oxides
Al.sub.2 O.sub.3
Wherein 4 ≧ ≧ 2
Alkaline earth oxides Wherein the BaO component is at least about 3%.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein said semiconductor is an N-type silicon semiconductor.
Claim 5
Dependent Claim
33 words
The process of claim 3 wherein said silicon semiconductor is contacted with an atmosphere consisting essentially of B 2 O 3 vapors and a carrier gas for said B 2 O 3 vapors.
Claim 6
Dependent Claim
18 words
The process of claim 3 wherein said temperature is in the range of about 1050°C to about 1200°C.
Claim 7
Dependent Claim
20 words
The process of claim 3 wherein said semiconductor and said glass-ceramic dopant host are in the form of thin wafers.
Claim 8
Dependent Claim
34 words
The process of claim 6 wherein a plurality of semiconductor wafers and a plurality of glass-ceramic dopant wafers are alternately positioned with the planar wafer surfaces being substantially parallel and in spaced, confronting relationship.
References Cited (Backward Citations)
US3314833A
Cited
US3540895A
Cited
US3518510A
Cited
US3540951A
Cited
US3530016A
Cited
US3852128A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-08 | 1979-12-08 | 1980-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-08 | 1983-12-08 | 1984-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-08 | 1987-12-08 | 1988-06-08 | $7700.00 | Window Closed / Lapsed |