Patent US3961351A successfully refreshed from Google Patents.
US3961351A
Expired / Lapsed
US
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Improvement in or relating to integrated circuit arrangements
Assignee: Plessey Handel und Investments AG
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Filing: 1974-11-07
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Granted: 1976-06-01
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Expires: 1994-11-07
Abstract
Abstract An integrated circuit arrangement having at least one pair of superposed transistor structures which provides very high packing density and low power consumption. The arrangement includes first, second and third superposed semiconductive layers, the second layer being interposed between, and of the opposite conductivity type to, the first and third layers, and having a doping density higher than the first layer but lower than the third layer. At least one electrical contact is formed on a surface of the first layer and a plurality of spaced-apart semiconductive regions of the same conductivity type as the second layer are formed in the said surface of the first layer. An electrical contact is provided for each of the semiconductive regions and a layer of an electrical contact material is formed on a surface of the third layer. The doping density of the first layer can be such that the said at least one electrical contact forms a Schottky diode with the first layer.
Inventors
- 👤 Victor Blatt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:02
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/65; H10D84/652; H10D88/00; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/085; Y10S148/087; Y10S148/139
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
157 words
An integrated circuit arrangement having at least one pair of superposed transistor structures, the arrangement including first, second and third superposed semiconductive layers, the second layer being interposed between, and of the opposite conductivity type to, the first and third layers and having a doping density higher than the first layer but lower than the third layer; a plurality of electrical contacts formed on a surface of the first layer to provide multi-inputs for the integrated circuit, said first layer having a doping density such that each of said plurality of electrical contacts forms a Schottky diode with the first layer; a plurality of spaced-apart semiconductive regions of the same conductivity type as the second layer formed in the said surface of the first layer; an electrical contact for each of the semiconductive regions to provide multi-outputs for the integrated circuit; and a layer of an electrical contact material formed on a surface of the third layer.
Claim 2
Dependent Claim
157 words
An integrated circuit arrangement having at least one pair of superposed transistor structures, the arrangement including first, second and third superposed semiconductive layers, the second layer being interposed between, and of the opposite conductivity type to, the first and third layers and having a doping density higher than the first layer but lower than the third layer; a plurality of electrical contacts formed on a surface of the first layer to provide multi-inputs for the integrated circuit, said first layer having a doping density such that each of said plurality of electrical contacts forms a Schottky diode with the first layer; a plurality of spaced-apart semiconductive regions of the same conductivity type as the second layer formed in the said surface of the first layer; an electrical contact for each of the semiconductive regions to provide multi-outputs for the integrated circuit; and a layer of an electrical contact material formed on a surface of the third layer.
Claim 3
Dependent Claim
32 words
An integrated circuit arrangement as claimed in claim 1 wherein the second layer and the semiconductive regions are of n-type conductivity and wherein the first and third layers are of p-type conductivity.
Claim 4
Dependent Claim
45 words
An integrated circuit arrangement as claimed in claim 1 wherein the doping density of the first layer and the semiconductive regions is arranged so that the gain of a multicollector transistor formed by the semiconductive regions and the first and second layers is relatively high.
Claim 5
Dependent Claim
146 words
An integrated circuit arrangement as claimed in claim 1 having a plurality of pairs of superposed transistor structures wherein the second and third layers are common to all of the said pairs and wherein the first layer is divided into a number of separate sections which are isolated from each other and which are each associated with a separate one of the said pairs, each of the separate sections having a plurality of electrical contacts formed on the surface thereof to provide multi-inputs for each of said sections, said first layer in each of said separate sections having a doping density such that each of said plurality of electrical contacts forms a Schottky diode therewith, a plurality of the said spaced-apart semiconductive regions formed in the surface thereof and an electrical contact for each of the semiconductive regions to provide multi-outputs for each of said sections.
Claim 6
Dependent Claim
45 words
An integrated circuit arrangement as claimed in claim 4 wherein each of the separate sections is isolated from the adjacent separate sections by a strip of a semiconductive material which is of the same conductivity type as the second layer but of higher carrier concentration.
Claim 7
Dependent Claim
29 words
An integrated circuit arrangement as claimed in claim 4 wherein each of the separate sections is isolated from the adjacent separate sections by a strip of a dielectric material.
Claim 8
Dependent Claim
36 words
An integrated circuit arrangement as claimed in claim 4 wherein the separate sections are isolated from each other by an interconnected isolation strip which is adapted to provide an electrical contact rail for the second layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-01 | 1979-12-01 | 1980-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-01 | 1983-12-01 | 1984-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-01 | 1987-12-01 | 1988-06-01 | $7700.00 | Window Closed / Lapsed |