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Process for improved development of electron-beam-sensitive resist films

Assignee: RCA Corp
•
Filing: 1974-09-16
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Granted: 1976-06-01
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Expires: 1994-09-16
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Abstract

Abstract The development of an exposed electron beam sensitive resist film in a two-stage process, rather than in a single stage, with a water wash between stages, improves the sensitivity and resolution that can be achieved for the resist.

Inventors

  • 👤 Lucian Anthony Barton

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 17:23
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/26; G03F7/30; Y; Y10; Y10S; Y10S430/00; Y10S430/143

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 123 words
A process for developing a supported electron beam sensitive resist film which has been exposed to a modulated electron beam, said resist film comprising an admixture of a naphthoquinone (1,2-)diazide sulfonic acid ester and an alkali soluble resin to form a surface relief pattern which consists essentially of a. contacting the exposed resist film with an aqueous alkaline developer solution to form only a partially developed relief pattern, b. washing the partially developed resist film with water, c. drying to remove the water, and d. contacting the partially developed and washed resist film with the developer solution for sufficient time to increase the effective sensitivity of said film which thereby improves the resolution of said pattern as compared to a single development step.
Claim 2
Dependent Claim 123 words
A process for developing a supported electron beam sensitive resist film which has been exposed to a modulated electron beam, said resist film comprising an admixture of a naphthoquinone (1,2-)diazide sulfonic acid ester and an alkali soluble resin to form a surface relief pattern which consists essentially of a. contacting the exposed resist film with an aqueous alkaline developer solution to form only a partially developed relief pattern, b. washing the partially developed resist film with water, c. drying to remove the water, and d. contacting the partially developed and washed resist film with the developer solution for sufficient time to increase the effective sensitivity of said film which thereby improves the resolution of said pattern as compared to a single development step.
Claim 3
Dependent Claim 38 words
A process according to claim 1 wherein the resist film comprises a mixture containing from about 1 to about 50% by weight of 2,4-bis(6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonyloxy)benzophenone and from about 99 to about 50% by weight of an alkali soluble resin.

References Cited (Backward Citations)

US3264104A Cited
US3615476A Cited
US3615486A Cited
US3482973A Cited
US3707373A Cited
US3639185A Cited
US3647443A Cited
US3674591A Cited
US3649393A Cited
US3759711A Cited
US3770433A Cited
US3859099A Cited
US3852771A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1979-06-01 1979-12-01 1980-06-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1983-06-01 1983-12-01 1984-06-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1987-06-01 1987-12-01 1988-06-01 $7700.00 Window Closed / Lapsed

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