Process and material for semiconductor photomask fabrication

Claim 2

In a plasma process for chemically etching metallic material in the presence of organic material without significant degradation of the organic material, the improvement comprising the step of: exposing the material to a gaseous plasma to form volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade wherein said gaseous plasma is formed from a mixture of oxygen and a halogen containing gas selected from one of the following groups, chlorine gas, inorganic chlorine containing compounds capable of forming volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade, and a halocarbon vapor or gas having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms.

Claim 3

In a plasma process for chemically etching metallic material in the presence of organic material without significant degradation of the organic material, the improvement comprising the step of: exposing the material to a gaseous low temperature plasma to form volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade and wherein said gaseous low temperature plasma is formed from a mixture of oxygen and a halocarbon vapor or gas having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms.

Claim 4

In a plasma process for chemically etching metallic material in the presence of organic material without significant degradation of the organic material, the improvement comprising the step of: exposing the material to a gaseous low temperature plasma to form volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade and wherein said gaseous low temperature plasma is formed from a mixture of oxygen and a halocarbon vapor or gas having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms.

Claim 5

A process for chemically converting material in a plasma environment in accordance with claim 2 wherein said halocarbon has only one carbon atom per molecule, said carbon atom being linked to a predominance of chlorine atoms.

Claim 6

A process as in claim 2 wherein said halocarbon includes at least one hydrogen atom.

Claim 7

A process as in claim 1 wherein said halogen containing gas and said oxygen are supplied to a reactor from separate sources.

Claim 8

A process as in claim 1 wherein said oxygen and said halogen containing gas exclusive of said halocarbon vapor are supplied to a reactor from a common premixed source.

Claim 9

A process as in claim 2 wherein said gaseous mixture contains 39.5 percent oxygen and 60.5 percent ethylene trichloride by gas phase volume, said mixture being supplied to said reactor building up a total reaction pressure in the range of 0.05 to 5 torr, and having at least 20 watts rf energy coupled to said mixture.

Claim 10

A composition of matter useful for chemically converting material in a plasma environment comprised of a mixture of oxygen and halogen containing gas selected from one of the following groups, chlorine gas, inorganic chlorine containing compounds capable of forming volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade, and a halocarbon vapor or gas having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms, wherein said mixture contains 25 to 80% oxygen by volume.

Claim 11

A composition of matter useful for chemically converting material in a plasma environment comprised of a mixture of oxygen and halogen containing gas selected from one of the following groups, chlorine gas, inorganic chlorine containing compounds capable of forming volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade, and a halocarbon vapor or gas having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms, wherein said mixture contains 25 to 80% oxygen by volume.

Claim 12

A composition of matter, useful for chemically converting material in a plasma environment, comprised of a binary gaseous mixture of oxygen and a halocarbon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms, and wherein said mixture contains 25 to 80% oxygen by volume.

Claim 13

A composition of matter, useful for chemically converting material in a plasma environment, comprised of a binary gaseous mixture of oxygen and a halocarbon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms, and wherein said mixture contains 25 to 80% oxygen by volume.

Claim 14

A composition of matter, in accordance with claim 9 wherein said halocarbon is ethylene trichloride.

Claim 15

A composition of matter in accordance with claim 9 wherein said halocarbon is carbon tetrachloride.

Claim 16

A composition of matter in accordance with claim 9 wherein said halocarbon is trichlorofluoromethane.

Claim 17

A composition of matter, in accordance with claim 9 wherein said halocarbon is 1, 1,2-trichloro-1, 2, 2-trifluoroethane.

Claim 18

A composition of matter, useful in a process for chemically converting material by forming oxychloride-based compounds volatile in a low pressure, low temperature plasma, comprise of a ternary gaseous mixture of oxygen, ethylene trichloride, and carbon tetrachloride, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 19

A composition of matter, useful in a process for chemically converting material by forming oxychloride-based compounds volatile in a low pressure, low temperature plasma, comprise of a ternary gaseous mixture of oxygen, ethylene trichloride, and carbon tetrachloride, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 20

A composition of matter, useful in a process for chemically converting material by forming oxychloride-based compounds volatile in a low pressure, low temperature plasma, comprised of a ternary gaseous mixture of oxygen, ethylene trichloride, and trichlorofluoromethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 21

A composition of matter, useful in a process for chemically converting material by forming oxychloride-based compounds volatile in a low pressure, low temperature plasma, comprised of a ternary gaseous mixture of oxygen, ethylene trichloride, and trichlorofluoromethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 22

A composition of matter, useful in a process for chemically converting material by forming oxychloride-based compounds volatile in a low pressure, low temperature plasma, comprised of a ternary gaseous mixture of oxygen, carbon tetrachloride, and trichlorofluoromethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 23

A composition of matter, useful in a process for chemically converting material by forming oxychloride-based compounds volatile in a low pressure, low temperature plasma, comprised of a ternary gaseous mixture of oxygen, carbon tetrachloride, and trichlorofluoromethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 24

A composition of matter, useful in a process for chemically converting material by forming oxychloride based compounds volatile in a low pressure, low temperature plasma, comprised of a ternary gaseous mixture of oxygen, carbon tetrachloride and 1, 1, 2-trichloro-1, 2, 2-trifluoroethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 25

A composition of matter, useful in a process for chemically converting material by forming oxychloride based compounds volatile in a low pressure, low temperature plasma, comprised of a ternary gaseous mixture of oxygen, carbon tetrachloride and 1, 1, 2-trichloro-1, 2, 2-trifluoroethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 26

A composition of matter useful in a process for chemically converting material by forming oxychloride based compounds volatile in a low pressure, low temperature plasma comprised of a ternary gaseous mixture of oxygen, ethylene trichloride and 1, 1, 2-trichloro-1, 2, 2-trifluoroethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 27

A composition of matter useful in a process for chemically converting material by forming oxychloride based compounds volatile in a low pressure, low temperature plasma comprised of a ternary gaseous mixture of oxygen, ethylene trichloride and 1, 1, 2-trichloro-1, 2, 2-trifluoroethane, and wherein said mixture contains 25% to 80% oxygen by volume.

Claim 28

A composition of matter useful in a process for chemically converting material by forming oxychloride based compounds volatile in a low pressure, low temperature plasma comprised of a ternary gaseous mixture of oxygen, trichlorofluoromethane and 1, 1, 2-trichloro-1, 2, 2-trifluoroethane, and wherein said mixture contains 25% to 85% oxygen by volume.

Claim 29

A composition of matter useful in a process for chemically converting material by forming oxychloride based compounds volatile in a low pressure, low temperature plasma comprised of a ternary gaseous mixture of oxygen, trichlorofluoromethane and 1, 1, 2-trichloro-1, 2, 2-trifluoroethane, and wherein said mixture contains 25% to 85% oxygen by volume.

Claim 30

In a plasma process for etching metallic material in the presence of an organic etch mask without significant degradation of the organic etch mask, the improvement comprising; the step of exposing the material and the organic etch mask to a low temperature, low pressure gaseous plasma to form volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade and wherein the low pressure gaseous plasma is formed from a mixture of oxygen and a halogen containing gas selected from one of the following groups, chlorine gas, inorganic chlorine compounds capable of forming volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade, and a halocarbon vapor or gas having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms.

Claim 31

In a plasma process for etching metallic material in the presence of an organic etch mask without significant degradation of the organic etch mask, the improvement comprising; the step of exposing the material and the organic etch mask to a low temperature, low pressure gaseous plasma to form volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade and wherein the low pressure gaseous plasma is formed from a mixture of oxygen and a halogen containing gas selected from one of the following groups, chlorine gas, inorganic chlorine compounds capable of forming volatile oxychloride derivatives as products within the temperature range 25° to 350° Centigrade, and a halocarbon vapor or gas having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of chlorine atoms.

Claim 32

A process for chemically converting materials in a plasma environment, comprising the step of exposing the material to a gaseous low pressure, low temperature plasma formed from a binary mixture of chlorine gas and oxygen wherein oxygen comprises between 40% and 80% of said mixture.

Claim 33

A process for chemically converting materials in a plasma environment, comprising the step of exposing the material to a gaseous low pressure, low temperature plasma formed from a binary mixture of chlorine gas and oxygen wherein oxygen comprises between 40% and 80% of said mixture.

Claim 34

A process for chemically etching metallic materials in the presence of organic materials without significant degradation of the organic materials in a plasma environment comprising the step of: exposing the material to a low pressure, gaseous plasma formed from a binary mixture of oxygen and inorganaic chloride gas or vapor and thereby forming volatile oxychloride based compounds within the temperature range of 25° to 350° Centigrade.

Claim 35

A process for chemically etching metallic materials in the presence of organic materials without significant degradation of the organic materials in a plasma environment comprising the step of: exposing the material to a low pressure, gaseous plasma formed from a binary mixture of oxygen and inorganaic chloride gas or vapor and thereby forming volatile oxychloride based compounds within the temperature range of 25° to 350° Centigrade.

Claim 36

A process in accordance with claim 22 wherein said chloride is boron trichloride.

Claim 37

A process in accordance with claim 22 wherein said chloride is phosphorous pentachloride.

Claim 38

A composition of matter, useful for chemically converting material in a plasma environment comprising, a binary mixture of oxygen and inorganic chloride gas, wherein said inorganic chloride gas comprises from 20% to 60% of said mixture.

Claim 39

A composition of matter, useful for chemically converting material in a plasma environment comprising, a binary mixture of oxygen and inorganic chloride gas, wherein said inorganic chloride gas comprises from 20% to 60% of said mixture.

Claim 40

A composition in accordance with claim 25 wherein said inorganic halide is boron trichloride.

Claim 41

A composition in accordance with claim 25 wherein said inorganic chloride is phosphorous pentachloride.