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US3948692A
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Method of preparing multi-layer semiconductor hetero-structures on the basis of compounds AIII BV where AIII is a metal of group three and BV is a non-metal of group five
Assignee: Individual
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Filing: 1974-06-24
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Granted: 1976-04-06
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Expires: 1994-06-24
Abstract
Abstract The method of preparing multi-layer semiconductor heterostructures on the basis of compounds A III B V , where A III is an element of the third group and B V is an element of the fifth group, consists in crystallization of layers of this heterostructure on a substrate from a liquid zone which is gallium or bismuth pre-saturated with compounds A III B V from a source which is a solid solution of compounds A III B V feeding the liquid zone with the material of the crystallizing layers.
Inventors
- 👤 Lev Vasilievich Golubev
- 👤 Evgeny Fedorovich Korneev
- 👤 Jury Vasilievich Shmartsev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:03
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/10; C30B19/106; C30B19/103; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2912; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3422
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
93 words
A method of preparing a multi-layer semiconductor heterostructure on the basis of compounds A III B V where A III is an element of the third group and B V is an element of the fifth group of the Periodic System, consisting in crystallization of layers of the multi-layer semiconductor heterostructure by passing current pulses through the substrate, liquid phase, the liquid-to-solid interface of the phases and said substrate, and a source selected from a compound of the formula A III B V wherein A III and B V are as defined above.
Claim 2
Independent Claim
93 words
A method of preparing a multi-layer semiconductor heterostructure on the basis of compounds A III B V where A III is an element of the third group and B V is an element of the fifth group of the Periodic System, consisting in crystallization of layers of the multi-layer semiconductor heterostructure by passing current pulses through the substrate, liquid phase, the liquid-to-solid interface of the phases and said substrate, and a source selected from a compound of the formula A III B V wherein A III and B V are as defined above.
Claim 3
Dependent Claim
39 words
A method according to claim 1 wherein the duration of said pulses and spacing between said pulses exceeds the time period for the establishment of the diffusion equilibrium in said system, said system comprising said source, solution-melt and substrate.
Claim 4
Dependent Claim
37 words
A method according to claim 1, wherein said solution-melt is an element selected from the group A III or B V pre-saturated with the materals of said source at the temperature at which the process is conducted.
Claim 5
Dependent Claim
123 words
A method according to claim 1, wherein said substrate is GaSb or AlSb and said solution-melt is an element selected from the group consisting of Bi and Ga, pre-saturated at a temperature of from 450° to 550°C with said compounds or with AlSb from said source, said source being a solid solution of GaSb-AlSb, and supplying said liquid phase with the compounds GaSb and AlSb under the action of direct current pulses, said current passing through said source, liquid phase and the substrate in a direction which ensures the crystallization of the layers on the substrate by dissolving the materials of the source in the liquid phase, two layers of the multi-layer semiconductor heterostructure being crystallized when one pulse of current is applied.
References Cited (Backward Citations)
US2999776A
Cited
US3411946A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-06 | 1979-10-06 | 1980-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-06 | 1983-10-06 | 1984-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-06 | 1987-10-06 | 1988-04-06 | $7700.00 | Window Closed / Lapsed |