US2999776A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing differentiated doping zones in semiconductor crystals
Assignee: Siemens and Halske AG
•
Filing: 1956-01-09
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Granted: 1961-09-12
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Expires: 1976-01-09
Abstract
No abstract record available.
Inventors
- 👤 Dorendorf Heinz
- 👤 Henker Heinz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:53
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/14; C30B15/18; Y; Y10; Y10S; Y10S148/00; Y10S148/041; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
51 words
IN A PROCESS FOR GROWING SEMICONDUCTOR CRYSTALS IN WHICH THERE IS MAINTAINED AT LEAST ONE SOLID-LIQUID INTERFACE WHICH IS CAUSED TO MOVE WITH RESPECT TO THE SEMICONDUCTOR MATERIAL UNDER TREATMENT IN COMBINATION THEREWITH THE STEP OF PASSING A CONTROLLED DIRECT CURRENT THROUGH SAID SOLID-LIQUID INTERFACE SO AS TO SUPERIMPOSE A COM-
Claim 2
Dependent Claim
51 words
IN A PROCESS FOR GROWING SEMICONDUCTOR CRYSTALS IN WHICH THERE IS MAINTAINED AT LEAST ONE SOLID-LIQUID INTERFACE WHICH IS CAUSED TO MOVE WITH RESPECT TO THE SEMICONDUCTOR MATERIAL UNDER TREATMENT IN COMBINATION THEREWITH THE STEP OF PASSING A CONTROLLED DIRECT CURRENT THROUGH SAID SOLID-LIQUID INTERFACE SO AS TO SUPERIMPOSE A COM-
References Cited (Backward Citations)
GB727678A
Cited
US2768914A
Cited
US2739088A
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US2809135A
Cited
FR1086903A
Cited
US2689930A
Cited
US2792317A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-09-11 | 1965-03-13 | 1965-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-09-11 | 1969-03-13 | 1969-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-09-11 | 1973-03-13 | 1973-09-12 | $7700.00 | Window Closed / Lapsed |