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US2768914A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for producing semiconductive crystals of uniform resistivity

Assignee: AT&T Inc
•
Filing: 1951-06-29
•
Granted: 1956-10-30
•
Expires: 1971-06-29
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Abstract

No abstract record available.

Inventors

  • 👤 Buehler Ernest
  • 👤 Gordon K Teal

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 13:47
CPC Classifications
C; C30; C30B; C30B15/00; H; H10; H10P; H10P90/00; H10P90/12; C30B13/00; C30B15/02; C30B15/04; C30B29/00; C30B29/02; C30B29/06; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 136 words
THE METHOD OF PRODUCING A CRYSTAL OF NORMALLY SOLID SEMICONDUCTIVE MATERIAL CONTAINING A SIGNIFICANT IMPURITY HAVING A T OF LESS THAN 1 COMPRISING INSERTING A SEED INTO A MELT OF THE SAID SEMICONDUCTIVE MATERIAL CONTAINING THE SAID SIGNIFICANT IMPURITY, AND WITHDRAWING THE SAID SEED AT A DECREASING WITHDRAWAL RATE SUCH AS TO SUBSTANTIALLY COMPENSATE FOR THE RESULTING INCREASING CONCENTRATION OF THE SAID SIGNIFICANT IMPURITY IN THE MELT AND SUCH AS TO PRODUCE A CRYSTAL MANIFESTING SUBSTANTIALLY UNIFORM RESISTIVITY OVER THAT PORTION OF THE CRYSTAL PRODUCED WHILE DECREASING THE WITHDRAWAL RATE, THE RATE OF WITHDRAWAL BEING AT ALL TIMES SUCH AS TO MAINTAIN A SOLID-LIQUID INTERFACE BETWEEN THE CRYSTAL AND THE MELT, T BEING DEFINED AS THE RATIO OF IMPURITY CONCENTRATION IN THE SOLID TO THE IMPURITY CONCENTRATION IN THE LIQUID WITH THE TWO PHASES AT EQUILIBRIUM.
Claim 2
Independent Claim 136 words
THE METHOD OF PRODUCING A CRYSTAL OF NORMALLY SOLID SEMICONDUCTIVE MATERIAL CONTAINING A SIGNIFICANT IMPURITY HAVING A T OF LESS THAN 1 COMPRISING INSERTING A SEED INTO A MELT OF THE SAID SEMICONDUCTIVE MATERIAL CONTAINING THE SAID SIGNIFICANT IMPURITY, AND WITHDRAWING THE SAID SEED AT A DECREASING WITHDRAWAL RATE SUCH AS TO SUBSTANTIALLY COMPENSATE FOR THE RESULTING INCREASING CONCENTRATION OF THE SAID SIGNIFICANT IMPURITY IN THE MELT AND SUCH AS TO PRODUCE A CRYSTAL MANIFESTING SUBSTANTIALLY UNIFORM RESISTIVITY OVER THAT PORTION OF THE CRYSTAL PRODUCED WHILE DECREASING THE WITHDRAWAL RATE, THE RATE OF WITHDRAWAL BEING AT ALL TIMES SUCH AS TO MAINTAIN A SOLID-LIQUID INTERFACE BETWEEN THE CRYSTAL AND THE MELT, T BEING DEFINED AS THE RATIO OF IMPURITY CONCENTRATION IN THE SOLID TO THE IMPURITY CONCENTRATION IN THE LIQUID WITH THE TWO PHASES AT EQUILIBRIUM.

References Cited (Backward Citations)

US1353571A Cited
US1531784A Cited
US1921934A Cited
US2188771A Cited
US2091903A Cited
US2530110A Cited
US2514879A Cited
US2683676A Cited
GB706858A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1959-10-30 1960-04-30 1960-10-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1963-10-30 1964-04-30 1964-10-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1967-10-30 1968-04-30 1968-10-30 $7700.00 Window Closed / Lapsed

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