Method of encapsulating beam lead semiconductor devices

Claim 2

The process of fabricating a beam lead semiconductor device having an active device surface having beam leads affixed thereto and an oppositely disposed back surface, the device being adapted for mounting on a circuit board by means of pressure bonding said beam leads, said process including the formation of a protective silicone resin film upon only the active surface of the beam lead semiconductor device, the process comprising: 1. applying to the active device surface of a semiconductor wafer containing an array of semiconductor devices having said beam leads affixed thereto a uniform film of a silicone resin; 2. heating said wafer to cure said film; 3. forming on the surface of said film a mask conforming to the desired configuration of the protective resin film;

Claim 3

applying a solvent to remove the exposed resin film; 5. removing the mask on the surface of the remaining resin overlying the wafer; and 6. separating the wafer into individual semiconductor devices.

Claim 4

applying a solvent to remove the exposed resin film; 5. removing the mask on the surface of the remaining resin overlying the wafer; and 6. separating the wafer into individual semiconductor devices.

Claim 5

The process in accordance with claim 1 in which said silicone resin film is applied in a thickness of from about 0.1 to 0.3 mil.

Claim 6

The process of fabricating a beam lead semiconductor device having an active device surface having beam leads affixed thereto and an oppositely disposed back surface, the device being adapted for mounting on a circuit board by means of thermocompression bonding, said process including the formation of a protective silicone resin film upon only the active surface of the beam lead semiconductor device, the process comprising: 1. applying to the active device surface of a semiconductor wafer containing an array of semiconductor devices having said beam leads affixed thereto a uniform film of a silicone resin having a thickness of between 0.1 and 0.3 mil; 2. heating said wafer to cure said resin film; 3. forming on the surface of said film a metal mask conforming to the desired configuration of the protective resin film; 4. applying a solvent to remove the exposed resin film; 5. removing the metal mask on the surface of the remaining resin overlying the wafer; and 6. separating the wafer into individual semiconductor devices.

Claim 7

The process of fabricating a beam lead semiconductor device having an active device surface having beam leads affixed thereto and an oppositely disposed back surface, the device being adapted for mounting on a circuit board by means of thermocompression bonding, said process including the formation of a protective silicone resin film upon only the active surface of the beam lead semiconductor device, the process comprising: 1. applying to the active device surface of a semiconductor wafer containing an array of semiconductor devices having said beam leads affixed thereto a uniform film of a silicone resin having a thickness of between 0.1 and 0.3 mil; 2. heating said wafer to cure said resin film; 3. forming on the surface of said film a metal mask conforming to the desired configuration of the protective resin film; 4. applying a solvent to remove the exposed resin film; 5. removing the metal mask on the surface of the remaining resin overlying the wafer; and 6. separating the wafer into individual semiconductor devices.