US3943218A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing shaped hollow bodies
Assignee: Siemens AG
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Filing: 1973-06-14
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Granted: 1976-03-09
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Expires: 1993-06-14
Abstract
Abstract A method of producing shaped hollow semiconductor members, as of silicon or silicon carbide by depositing a select semiconductor material from a gaseous compound onto a heated graphite substrate which is first heat-treated above 1300° C. in a flowing gas atmosphere, preferably a mixture of H 2 and SiHCl 3 so as to modify the surface characteristics of the substrate whereby the deposited semiconductor material does not interact with the substrate so that the substrate may be reused.
Inventors
- 👤 Wolfgang Dietze
- 👤 Andreas Kasper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:16
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/01
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
189 words
In a method of manufacturing a shaped hollow body composed of a semiconductor material selected from the group consisting of silicon or silicon carbide wherein said semiconductor material is deposited from a gas phase onto a heated graphite substrate so that the surface of said substrate becomes coated with a layer of said semiconductor material and then the substrate is removed for re-use while obtaining the desired shaped hollow body, the improvement comprising: heat-treating the graphite substrate prior to deposition of a new layer of said semiconductor material thereon for at least 15 minutes at a temperature in the range of about 1300° C. to about 1600° C. in a gas stream composed of a gas selected from the group consisting of a hydrogen gas nitrogen, and a rare gas said stream having a flow rate in the range of about 200 to 300 liters per hour; whereby the surface characteristics of said substrate are altered so as to substantially prevent interaction between graphite and said new layer of the semiconductor material and provide re-usability of the so-treated substrate in the formation of a plurality of shaped hollow bodies.
Claim 2
Dependent Claim
189 words
In a method of manufacturing a shaped hollow body composed of a semiconductor material selected from the group consisting of silicon or silicon carbide wherein said semiconductor material is deposited from a gas phase onto a heated graphite substrate so that the surface of said substrate becomes coated with a layer of said semiconductor material and then the substrate is removed for re-use while obtaining the desired shaped hollow body, the improvement comprising: heat-treating the graphite substrate prior to deposition of a new layer of said semiconductor material thereon for at least 15 minutes at a temperature in the range of about 1300° C. to about 1600° C. in a gas stream composed of a gas selected from the group consisting of a hydrogen gas nitrogen, and a rare gas said stream having a flow rate in the range of about 200 to 300 liters per hour; whereby the surface characteristics of said substrate are altered so as to substantially prevent interaction between graphite and said new layer of the semiconductor material and provide re-usability of the so-treated substrate in the formation of a plurality of shaped hollow bodies.
Claim 3
Dependent Claim
17 words
In a method as defined in claim 1 wherein said hydrogen includes a trace amount of silico-chloroform.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-09 | 1979-09-08 | 1980-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-09 | 1983-09-08 | 1984-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-09 | 1987-09-08 | 1988-03-09 | $7700.00 | Window Closed / Lapsed |