Patent US3935585A successfully refreshed from Google Patents.
US3935585A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor diode with voltage-dependent capacitance
Assignee: Individual
•
Filing: 1974-02-22
•
Granted: 1976-01-27
•
Expires: 1994-02-22
Abstract
Abstract A semiconductor wafer constituting a diode with voltage-dependent capacitance, having an N-type base layer and two P-type layers forming together two P-N junctions. The area of one of the P-N junctions is 30 to 50 times greater than that of the other P-N junction. The larger P-N junction of the semiconductor diode is energized by a positive potential, thus becoming forward-biased, while the smaller junction is energized by a negative potential, becoming reverse-biased. The resulting barrier capacitance of the reverse-biased junction determines capacitance, and its variation with temperature is compensated by a simultaneously changing potential of the two P-N junctions.
Inventors
- 👤 Stanislav Konstantinovich Korovin
- 👤 Igor Ivanovich Kruglov
- 👤 Konstantin Andreevich Preobrazhentsev
- 👤 Jury Ivanovich Sidorov
- 👤 Stanislav Vladislavovich Fronk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:00
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
121 words
A semiconductor diode with a voltage-dependent capacitance, comprising a semiconducting crystal having two outer layers of one type of conductivity and an intermediate layer of the opposite type of conductivity disposed between said outer layers; said intermediate layer having a resistivity substantially greater than that of said outer layers, and defining therewith two P-N junctions; one of said junctions being forward-biased and the other being reverse-biased; and electrodes connected to said outer layers for serial insertion of the diode into an electric circuit; the area of said forward-biased junction being by at least twenty times greater than the area of said reverse-biased junction; said forward-biased junction including means providing compensation for the temperature coefficient of the diode capacitance under temperature fluctuations.
Claim 2
Dependent Claim
121 words
A semiconductor diode with a voltage-dependent capacitance, comprising a semiconducting crystal having two outer layers of one type of conductivity and an intermediate layer of the opposite type of conductivity disposed between said outer layers; said intermediate layer having a resistivity substantially greater than that of said outer layers, and defining therewith two P-N junctions; one of said junctions being forward-biased and the other being reverse-biased; and electrodes connected to said outer layers for serial insertion of the diode into an electric circuit; the area of said forward-biased junction being by at least twenty times greater than the area of said reverse-biased junction; said forward-biased junction including means providing compensation for the temperature coefficient of the diode capacitance under temperature fluctuations.
Claim 3
Dependent Claim
27 words
The semiconductor diode as defined in claim 1, wherein said crystal is made of a material selected from the group consisting of silicon, germanium and gallium arsenide.
Claim 4
Dependent Claim
44 words
The semiconductor diode as defined in claim 2, wherein said P-N junctions are formed with the use of a material selected from the group consisting of boron, aluminum, indium, phosphorus, arsenic, antimony and alloys thereof, zinc being used in conjunction with the gallium aresenide.
References Cited (Backward Citations)
US2989650A
Cited
US3093755A
Cited
US3176151A
Cited
US3233196A
Cited
US3307088A
Cited
US3544395A
Cited
US3532945A
Cited
US3764415A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-01-26 | 1979-07-28 | 1980-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-01-26 | 1983-07-28 | 1984-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-01-26 | 1987-07-28 | 1988-01-27 | $7700.00 | Window Closed / Lapsed |