US3176151A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Varactor diode with concentration of deep lying impurities and enabling circuitry
Assignee: AT&T Inc
•
Filing: 1961-02-13
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Granted: 1965-03-30
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Expires: 1981-02-13
Abstract
No abstract record available.
Inventors
- 👤 Martin M Atalla
- 👤 Kahng Dawon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:38
CPC Classifications
H; H10; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/062
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
65 words
IN COMBINATION, A SEMICONDUCTOR DEVICE COMPRISING AT LEAST ONE PN JUNCTION AND AN ASSOCIATED SPACE CHARGE REGION, SUBSTANTIALLY ALL OF SAID SPACE CHARGE REGION INCLUDING A CONCENTRATION OF A DEEP LYING IMPURITY, SAID DEEP LYING IMPURITY HAVING AN ASSOCIATED IONIZATION FREQUENCY, SUPPLY MEANS FOR REVERSES BIASING SAID PN JUNCTION, AND SIGNAL MEANS FOR VARYING THE REVERSE BIAS AT A FREQUENCY GREATER THAN SAID IONIAZATION FREQIENCY.
Claim 2
Dependent Claim
65 words
IN COMBINATION, A SEMICONDUCTOR DEVICE COMPRISING AT LEAST ONE PN JUNCTION AND AN ASSOCIATED SPACE CHARGE REGION, SUBSTANTIALLY ALL OF SAID SPACE CHARGE REGION INCLUDING A CONCENTRATION OF A DEEP LYING IMPURITY, SAID DEEP LYING IMPURITY HAVING AN ASSOCIATED IONIZATION FREQUENCY, SUPPLY MEANS FOR REVERSES BIASING SAID PN JUNCTION, AND SIGNAL MEANS FOR VARYING THE REVERSE BIAS AT A FREQUENCY GREATER THAN SAID IONIAZATION FREQIENCY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-03-29 | 1968-09-28 | 1969-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-03-29 | 1972-09-28 | 1973-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-03-29 | 1976-09-28 | 1977-03-30 | $7700.00 | Window Closed / Lapsed |