US3935585A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor diode with voltage-dependent capacitance
Assignee: Individual
•
Filing: 1974-02-22
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Granted: 1976-01-27
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Expires: 1994-02-22
Abstract
Abstract A semiconductor wafer constituting a diode with voltage-dependent capacitance, having an N-type base layer and two P-type layers forming together two P-N junctions. The area of one of the P-N junctions is 30 to 50 times greater than that of the other P-N junction. The larger P-N junction of the semiconductor diode is energized by a positive potential, thus becoming forward-biased, while the smaller junction is energized by a negative potential, becoming reverse-biased. The resulting barrier capacitance of the reverse-biased junction determines capacitance, and its variation with temperature is compensated by a simultaneously changing potential of the two P-N junctions.
Inventors
- 👤 Stanislav Konstantinovich Korovin
- 👤 Igor Ivanovich Kruglov
- 👤 Konstantin Andreevich Preobrazhentsev
- 👤 Jury Ivanovich Sidorov
- 👤 Stanislav Vladislavovich Fronk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:37
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
121 words
A semiconductor diode with a voltage-dependent capacitance, comprising a semiconducting crystal having two outer layers of one type of conductivity and an intermediate layer of the opposite type of conductivity disposed between said outer layers; said intermediate layer having a resistivity substantially greater than that of said outer layers, and defining therewith two P-N junctions; one of said junctions being forward-biased and the other being reverse-biased; and electrodes connected to said outer layers for serial insertion of the diode into an electric circuit; the area of said forward-biased junction being by at least twenty times greater than the area of said reverse-biased junction; said forward-biased junction including means providing compensation for the temperature coefficient of the diode capacitance under temperature fluctuations.
Claim 2
Dependent Claim
121 words
A semiconductor diode with a voltage-dependent capacitance, comprising a semiconducting crystal having two outer layers of one type of conductivity and an intermediate layer of the opposite type of conductivity disposed between said outer layers; said intermediate layer having a resistivity substantially greater than that of said outer layers, and defining therewith two P-N junctions; one of said junctions being forward-biased and the other being reverse-biased; and electrodes connected to said outer layers for serial insertion of the diode into an electric circuit; the area of said forward-biased junction being by at least twenty times greater than the area of said reverse-biased junction; said forward-biased junction including means providing compensation for the temperature coefficient of the diode capacitance under temperature fluctuations.
Claim 3
Dependent Claim
27 words
The semiconductor diode as defined in claim 1, wherein said crystal is made of a material selected from the group consisting of silicon, germanium and gallium arsenide.
Claim 4
Dependent Claim
44 words
The semiconductor diode as defined in claim 2, wherein said P-N junctions are formed with the use of a material selected from the group consisting of boron, aluminum, indium, phosphorus, arsenic, antimony and alloys thereof, zinc being used in conjunction with the gallium aresenide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-01-26 | 1979-07-28 | 1980-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-01-26 | 1983-07-28 | 1984-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-01-26 | 1987-07-28 | 1988-01-27 | $7700.00 | Window Closed / Lapsed |