Patent US3932848A successfully refreshed from Google Patents.
US3932848A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory
Assignee: Intel Corp
•
Filing: 1975-01-20
•
Granted: 1976-01-13
•
Expires: 1995-01-20
Abstract
Abstract A feedback circuit for feeding back a signal to control the charging of a sense node in a static MOS memory. A signal from a sense amplifier is fed back to prevent the node from dropping below a predetermined potential and to prepare the node to be recharged. This in turn allows the pull-up transistor to have a higher resistance allowing the node to be more quickly discharged.
Inventors
- 👤 Eli Porat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:46
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4094; G11C11/4091; G11C17/00; G11C17/08; G11C17/10; G11C17/12
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
103 words
In a static memory having a charged sense node which is selectively coupled to memory cells in the memory for sensing the state of such cells, a charging means for charging said sense node, and a sense amplifier having its input coupled to said sense node, an improvement comprising: control means for controlling the flow of current coupled to said sense node; and feedback means coupled between said sense amplifier and said control means for controlling the flow of current at said sense node; whereby said sense node may be rapidly charged and discharged since the voltage swing at the node is restricted.
Claim 2
Dependent Claim
103 words
In a static memory having a charged sense node which is selectively coupled to memory cells in the memory for sensing the state of such cells, a charging means for charging said sense node, and a sense amplifier having its input coupled to said sense node, an improvement comprising: control means for controlling the flow of current coupled to said sense node; and feedback means coupled between said sense amplifier and said control means for controlling the flow of current at said sense node; whereby said sense node may be rapidly charged and discharged since the voltage swing at the node is restricted.
Claim 3
Dependent Claim
38 words
The improvement defined by claim 1 wherein said control means includes a field-effect transistor coupled between a source of potential and said sense node and wherein the gate of said field-effect transistor is coupled to said feedback means.
Claim 4
Dependent Claim
24 words
The improvement defined by claim 2 wherein said charging means comprises a pull-up transistor coupled between said sense node and said source of potential.
Claim 5
Dependent Claim
51 words
The improvement defined in claim 1 wherein said sense amplifier includes a node which is charged through a second charging means and wherein said node is coupled to a source of potential through a feedback transistor having a gate, said gate of said feedback transistor being coupled to said feedback means.
Claim 6
Dependent Claim
19 words
The improvement defined by claim 4 wherein said charging means and said second charging means each comprise pull-up transistors.
Claim 7
Dependent Claim
16 words
The improvement defined by claim 5 wherein said control means comprises a depletion mode field-effect transistor.
Claim 8
Independent Claim
118 words
An apparatus for sensing potential on a sense node where said sense node is coupled to static memory cells comprising: a source of potential; a first transistor coupled between said source of potential and said sense node; a sense amplifier having its input coupled to said sense node; a second transistor having a gate and two terminals, said terminals being coupled between said sense node and said source of potential; and a feedback line coupled between said gate of said second transistor and said sense amplifier for feeding back a signal from said sense amplifier; whereby when said potential on said sense node drops said second transistor conducts thereby limiting the drop in potential on said sense node.
Claim 9
Independent Claim
118 words
An apparatus for sensing potential on a sense node where said sense node is coupled to static memory cells comprising: a source of potential; a first transistor coupled between said source of potential and said sense node; a sense amplifier having its input coupled to said sense node; a second transistor having a gate and two terminals, said terminals being coupled between said sense node and said source of potential; and a feedback line coupled between said gate of said second transistor and said sense amplifier for feeding back a signal from said sense amplifier; whereby when said potential on said sense node drops said second transistor conducts thereby limiting the drop in potential on said sense node.
Claim 10
Dependent Claim
17 words
The apparatus defined by claim 7 wherein said first and said second transistors are n-channel, field-effect transistors.
Claim 11
Dependent Claim
19 words
The apparatus defined by claim 7 wherein said first transistor includes a gate coupled to said source of potential.
Claim 12
Dependent Claim
14 words
The apparatus defined by claim 7 wherein said static memory is a read-only memory.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-01-12 | 1979-07-14 | 1980-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-01-12 | 1983-07-14 | 1984-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-01-12 | 1987-07-14 | 1988-01-13 | $7700.00 | Window Closed / Lapsed |