Abstract A Trappatt diode having four conducting regions. The diode includes an n-type region contiguous to a p-type region, forming a P-N junction therebetween. Contiguous to the n-type region is a first outer conductivity region. The first outer conductivity region is of the same conductivity type as the n-type region but of a higher doping concentration. Contiguous to the p-type region is a second outer conductivity region. The second outer conductivity region is of the same conductivity type as the ptype region but of higher doping concentration. The p-type region and the n-type region are the active regions of the Trapatt diode and have a graded doping concentration. In addition, the active regions are in close proximity to a surface of the diode which is generally mounted in contact with a heat sink. The graded doping concentration and close proximity of the active regions to a heat sink results in a Trapatt diode with good thermal dissipation characteristics, increased power output, and a broader bandwidth.
A METHOD OF FABRICATING A TRAPATT DIODE FROM A SUBSTRATE HAVING HIGH DOPANT CONCENTRATION OF A GIVEN CONDUCTIVITY TYPE COMPRISING THE STEPS OF: A. EPITAXIALLY GROWING ON SAID SUBSTRATE AN EPITAXIAL REGION OF THE SAME CONDUCTIVITY TYPE AS SAID SUBSTRATE BUT OF LOWER DOPING CONCENTRATION THAN THE DOPING CONCENTRATION OF SAID SUBSTRATE, SAID EPITAXIAL REGION HAVING A SURFACE OPPOSED TO SAID SUBSTRATE; B. DEPOSITING ON SAID OPPOSED SURFACE A DOPANT OF THE OPPOSITE CONDUCTIVITY TYPE AS SAID SUBSTRATE, AND OF LOWER DOPING CONCENTRATION THAN THE DOPANT CONCENTRATION OF SAID SUBSTRATE, C. DIFFUSING SAID OPPOSITE CONDUCTIVITY TYPE DOPANT INTO SAID EPITAXIAL REGION SUCH THAT A PORTION OF SAID EPITAXIL REGION CONTIGUOUS TO SAID OPPOSED SURFACE FORMS A REGION OF SAID OPPOSITE CONDUCTIVITY TYPE AND SUCH THAT SAID HIGH
Claim 2
Independent Claim
127 words
A METHOD OF FABRICATING A TRAPATT DIODE FROM A SUBSTRATE HAVING HIGH DOPANT CONCENTRATION OF A GIVEN CONDUCTIVITY TYPE COMPRISING THE STEPS OF: A. EPITAXIALLY GROWING ON SAID SUBSTRATE AN EPITAXIAL REGION OF THE SAME CONDUCTIVITY TYPE AS SAID SUBSTRATE BUT OF LOWER DOPING CONCENTRATION THAN THE DOPING CONCENTRATION OF SAID SUBSTRATE, SAID EPITAXIAL REGION HAVING A SURFACE OPPOSED TO SAID SUBSTRATE; B. DEPOSITING ON SAID OPPOSED SURFACE A DOPANT OF THE OPPOSITE CONDUCTIVITY TYPE AS SAID SUBSTRATE, AND OF LOWER DOPING CONCENTRATION THAN THE DOPANT CONCENTRATION OF SAID SUBSTRATE, C. DIFFUSING SAID OPPOSITE CONDUCTIVITY TYPE DOPANT INTO SAID EPITAXIAL REGION SUCH THAT A PORTION OF SAID EPITAXIL REGION CONTIGUOUS TO SAID OPPOSED SURFACE FORMS A REGION OF SAID OPPOSITE CONDUCTIVITY TYPE AND SUCH THAT SAID HIGH
Claim 3
Dependent Claim
33 words
The method set forth in claim 1, wherein said semiconductor material is silicon and the dopant of the first-recited deposition step is phosphorous of a doping concentration of 5 X 1016 cm 3.
Claim 4
Dependent Claim
29 words
The method set forth in claim 2 wherein said further dopant material of the second-recited deposition step is phosphorous of a doping concentration of 5 X 1019 cm 3.
Claim 5
Dependent Claim
28 words
The method set forth in claim 3 wherein the first-recited diffusion step is in a diffusion furnace for 5 to 8 hours at a temperature of about 1150*C.
Claim 6
Dependent Claim
34 words
The method set forth in claim 4 wherein the second-recited diffusion step of said higher concentration dopant is in a diffusion furnace for about 1 to 8 minutes at a temperature of about 1150*C.