High power avalanche diode
Abstract
Abstract A high power avalanche diode includes a substrate of N+-type semiconductor material having an epitaxial layer of a semiconductor material on a surface thereof. The epitaxial layer includes an N-type region adjacent the surface of the substrate and a P-type region over the N-type region forming a PN junction therebetween. The N-type region is at least 3 microns thick and is of uniform carrier concentration. The P-type region has a graded carrier concentration which increases from the PN junction to the surface of the epitaxial layer. The avalanche diode is made by epitaxially forming a layer of Ntype semiconductor material on the surface of a substrate of N+type semiconductor material. A source of P-type dopant material is provided on the surface of the epitaxial layer. The P-type dopant material is diffused into the epitaxial layer to a distance which is spaced from the substrate not less than 3 microns and so as to provide the graded carrier concentration in the resultant P-type region.
Inventors
- 👤 Shing-Gong Liu
- 👤 John Joseph Risko
Bibliographic Details
Claims Analysis
Total Claims: 4References Cited (Backward Citations)
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