US3351828A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Opto-electronic semiconductor device
Assignee: US Philips Corp
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Filing: 1965-08-13
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Granted: 1967-11-07
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Expires: 1985-08-13
Abstract
No abstract record available.
Inventors
- 👤 Beale Julian Robert Anthony
- 👤 Beer Andrew Francis
- 👤 Newman Peter Colin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:11
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/18; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/065; Y10S148/067; Y10S323/00; Y10S323/902
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
178 words
AN OPTO-ELECTRONIC DEVICE COMPRISING A SEMICONDUCTOR BODY HAVING PHOTON-EMITTING AND PHOTON-COLLECTING, SPACED, P-N JUNCTIONS, SAID PHOTON-EMITTING JUCTION BEING OPERABLE WHEN BIASED IN THE FORWARD DIRECTION TO EMIT PHOTONS WITH A QUANTUM EFFICIENCY GREATER THAN 0.1, MEANS FOR BIASING SAID PHOTON-EMITTING JUNCTION IN THE FORWARD DIRECTION TO CAUSE THE EMISSION OF PHOTONS TOWARD THE PHOTON-COLLECTING JUNCTION, AND MEANS FOR BIASING SAID PHOTON-COLLECTING JUNCTION IN THE REVERSE DIRECTION TO ESTABLISH IN A BODY PORTION ADJACENT THE PHOTON-COLLECTING JUNCTION A DEPLETION FIELD FOR COLLECTING CHARGE CARRIERS GENERATED UPON ABSORPTION WITHIN THE BODY OF THE EMITTED PHOTONSM THE SPACING BETWEEN THE PHOTON-EMITTING AND PHOTON-COLLECTING JUNCTIONS BEING AT LEAST ONE DIFFUSION LENGTH AT OPERATING TEMPERATURE FOR CHARGE CARRIERS INJECTED BY THE PHOTON-EMITTING JUNCTION INTO THE SEMICONDUCTOR BODY REGIONS LYING INTERMEDIATE THE JUNCTIONS, SAID PHOTON-EMITTING JUNCTION LYING ADJACENT A PLANE SURFACE OF THE SEMICONDUCTOR BODY AND EXTENDING ONLY TO SAID SURFACE, SAID PHOTON-COLLECTING JUNCTION COMPLETELY SURROUNDING THE PHOTON-EMITTING JUNCTION IN THE BULK AND EXTENDING ONLY TO THE SAME SAID SURFACE OF THE SEMICONDUCTOR BODY, THEREBY IMPROVING THE EFFICIENCY OF COLLECTION OF THE EMITTED PHOTONS.
Claim 2
Dependent Claim
178 words
AN OPTO-ELECTRONIC DEVICE COMPRISING A SEMICONDUCTOR BODY HAVING PHOTON-EMITTING AND PHOTON-COLLECTING, SPACED, P-N JUNCTIONS, SAID PHOTON-EMITTING JUCTION BEING OPERABLE WHEN BIASED IN THE FORWARD DIRECTION TO EMIT PHOTONS WITH A QUANTUM EFFICIENCY GREATER THAN 0.1, MEANS FOR BIASING SAID PHOTON-EMITTING JUNCTION IN THE FORWARD DIRECTION TO CAUSE THE EMISSION OF PHOTONS TOWARD THE PHOTON-COLLECTING JUNCTION, AND MEANS FOR BIASING SAID PHOTON-COLLECTING JUNCTION IN THE REVERSE DIRECTION TO ESTABLISH IN A BODY PORTION ADJACENT THE PHOTON-COLLECTING JUNCTION A DEPLETION FIELD FOR COLLECTING CHARGE CARRIERS GENERATED UPON ABSORPTION WITHIN THE BODY OF THE EMITTED PHOTONSM THE SPACING BETWEEN THE PHOTON-EMITTING AND PHOTON-COLLECTING JUNCTIONS BEING AT LEAST ONE DIFFUSION LENGTH AT OPERATING TEMPERATURE FOR CHARGE CARRIERS INJECTED BY THE PHOTON-EMITTING JUNCTION INTO THE SEMICONDUCTOR BODY REGIONS LYING INTERMEDIATE THE JUNCTIONS, SAID PHOTON-EMITTING JUNCTION LYING ADJACENT A PLANE SURFACE OF THE SEMICONDUCTOR BODY AND EXTENDING ONLY TO SAID SURFACE, SAID PHOTON-COLLECTING JUNCTION COMPLETELY SURROUNDING THE PHOTON-EMITTING JUNCTION IN THE BULK AND EXTENDING ONLY TO THE SAME SAID SURFACE OF THE SEMICONDUCTOR BODY, THEREBY IMPROVING THE EFFICIENCY OF COLLECTION OF THE EMITTED PHOTONS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-06 | 1971-05-08 | 1971-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-06 | 1975-05-08 | 1975-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-06 | 1979-05-08 | 1979-11-07 | $7700.00 | Window Closed / Lapsed |