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US3924320A
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Method to improve the reverse leakage characteristics in metal semiconductor contacts
Assignee: International Business Machines Corp
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Filing: 1974-10-18
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Granted: 1975-12-09
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Expires: 1994-10-18
Abstract
Abstract A method for improving the reverse leakage characteristics in metal semiconductor contact devices is disclosed. The process embodies ionic plasma bombardment as a step in producing improved reverse bias current voltage characteristics between metal semiconductor contacts.
Inventors
- 👤 Carl Altman
- 👤 Sydney G Chapman
- 👤 Akella V S Satya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 06:09
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10D64/60; H10D64/64; H10P; H10P50/00; H10P50/20; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
118 words
In a method for producing a metal P-type semiconductor contact diode wherein said metal has a work function higher than the electron affinity of the P-type substrate, said method including the following steps: a. providing a P-type semiconductor substrate having an epitaxial layer thereon and covered by a suitable insulating or oxide film; b. opening a contact hole through said layer; c. chemically pre-cleaning the contact area on said substrate; d. sputter cleaning the contact area on said substrate by subjecting said area to low energy ionic bombardment; e. depositing metal in said contact hole and in contact with said contact area of said semiconductor substrate, whereby the metal P-type semiconductor diode has an improved reverse current characteristic.
Claim 2
Dependent Claim
118 words
In a method for producing a metal P-type semiconductor contact diode wherein said metal has a work function higher than the electron affinity of the P-type substrate, said method including the following steps: a. providing a P-type semiconductor substrate having an epitaxial layer thereon and covered by a suitable insulating or oxide film; b. opening a contact hole through said layer; c. chemically pre-cleaning the contact area on said substrate; d. sputter cleaning the contact area on said substrate by subjecting said area to low energy ionic bombardment; e. depositing metal in said contact hole and in contact with said contact area of said semiconductor substrate, whereby the metal P-type semiconductor diode has an improved reverse current characteristic.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-12-08 | 1979-06-09 | 1979-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-12-08 | 1983-06-09 | 1983-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-12-08 | 1987-06-09 | 1987-12-09 | $7700.00 | Window Closed / Lapsed |