US3681220A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a field effect transistor
Assignee: Kev Electronics Corp
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Filing: 1969-04-03
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Granted: 1972-08-01
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Expires: 1989-04-03
Abstract
Abstract IN THE METHOD DESCRIBED HEREIN, THE GATE AND CHANNEL OF A FIELD-EFFECT TRANSITOR ARE CREATED IN SEPARATED PORTIONS OF A LAYER OF HIGH RESISTIVITY SEMICONDUCTOR MATERIAL BY ION IMPLANTATION USING HIGH ENERGY ION BEAMS. THE USE OF SUCH AN IMPLANTATION TECHNIQUE PERMITS THE IMPLANTED REGIONS TO BE VERY SHARPLY DEFINED SO THAT THE GATE AND CHANNEL REGIONS ARE SEPARATED BY A HIGH RESISTIVITY BARRIER WHICH IS OF SUBSTANTIALLY UNIFORM THICKNESS
Inventors
- 👤 George Chizinsky Beverly Farms
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:46
CPC Classifications
H; H10; H10D; H10D99/00; H10D48/00; H10D48/30; H10D48/32; H10D48/36; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/085; Y10S148/145
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-01 | 1976-01-31 | 1976-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-01 | 1980-01-31 | 1980-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-01 | 1984-01-31 | 1984-08-01 | $7700.00 | Window Closed / Lapsed |