US3919008A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing MOS type semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1973-07-25
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Granted: 1975-11-11
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Expires: 1993-07-25
Abstract
Abstract A MOS type semiconductor device including a P-type semiconductor substrate and at least one N-type region is formed by forming an insulator film on the surface of the substrate, applying a silicon layer on the surface of the insulator film, diffusing a P-type impurity into the silicon layer, removing selected portions of the silicon layer and of the insulator film, and selectively diffusing an N-type impurity into the P-type semiconductor substrate by utilizing the remaining portions of the silicon layer and of the insulator film as a mask.
Inventors
- 👤 Seiichi Iwamatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:06
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10D; H10D99/00; H10P95/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
105 words
A METHOD OF MANUFACTURING A COMPLEMENTARY MOS TYPE SEMICONDUCTOR DEVICE COMPRISING STEPS OF PREPARING AN N-TYPE SEMICONDUCTOR SUBSTRATE, FORMING A P-TYPE REGION AT A SELECTED PORTION OF SAID SUBSTRATE, APPLYING AN INSULATOR FILM TO COVER SAID P-TYPE REGION AND SAID SUBSTRATE, FORMING A LAYER OF POLYCRYSTALLINE SILICON ON SAID INSULATOR FILM, REMOVING PORTIONS OF SAID POLYCRYSTALLINE SILICON LAYER AND OF SAID INSULATOR FILM TO FORM A FIRST PAIR OF WINDOWS ABOVE SAID P-TYPE REGION AND A SECOND PAIR OF WINDOWS AT ANOTHER SELECTED PORTION OF SAID SUBSTRATE, DIFFUSING A P-TYPE IMPURITY INTOM SAID N-TYPE SUBSTRATE THROUGH SAID SECOND PAIR OF WINDOW TO FORM A PAIR
Claim 2
Independent Claim
105 words
A METHOD OF MANUFACTURING A COMPLEMENTARY MOS TYPE SEMICONDUCTOR DEVICE COMPRISING STEPS OF PREPARING AN N-TYPE SEMICONDUCTOR SUBSTRATE, FORMING A P-TYPE REGION AT A SELECTED PORTION OF SAID SUBSTRATE, APPLYING AN INSULATOR FILM TO COVER SAID P-TYPE REGION AND SAID SUBSTRATE, FORMING A LAYER OF POLYCRYSTALLINE SILICON ON SAID INSULATOR FILM, REMOVING PORTIONS OF SAID POLYCRYSTALLINE SILICON LAYER AND OF SAID INSULATOR FILM TO FORM A FIRST PAIR OF WINDOWS ABOVE SAID P-TYPE REGION AND A SECOND PAIR OF WINDOWS AT ANOTHER SELECTED PORTION OF SAID SUBSTRATE, DIFFUSING A P-TYPE IMPURITY INTOM SAID N-TYPE SUBSTRATE THROUGH SAID SECOND PAIR OF WINDOW TO FORM A PAIR
Claim 3
Independent Claim
159 words
A method of manufacturing a complementary MOS type semiconductor device, comprising the steps of preparing a semiconductor substrate of a first conductivity type, forming a region of second conductivity type opposite to said first conductivity type at a selected portion of said substrate, applying an insulator film to cover said region and said substrate, forming a layer of polycrystalline silicon on said insulator film, removing portions of said polycrystalline silicon layer and of said insulator film to form a first pair of windows above said region and a second pair of windows at another selected portion of said substrate, diffusing an impurity of said second conductivity type into said substrate through said second pair of windows to form a pair of source and drain regions and diffusing an impurity of said first conductivity type into said region of said second conductivity type through said first pair of windows to form a pair of regions of said first conductivity type.
Claim 4
Independent Claim
159 words
A method of manufacturing a complementary MOS type semiconductor device, comprising the steps of preparing a semiconductor substrate of a first conductivity type, forming a region of second conductivity type opposite to said first conductivity type at a selected portion of said substrate, applying an insulator film to cover said region and said substrate, forming a layer of polycrystalline silicon on said insulator film, removing portions of said polycrystalline silicon layer and of said insulator film to form a first pair of windows above said region and a second pair of windows at another selected portion of said substrate, diffusing an impurity of said second conductivity type into said substrate through said second pair of windows to form a pair of source and drain regions and diffusing an impurity of said first conductivity type into said region of said second conductivity type through said first pair of windows to form a pair of regions of said first conductivity type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-11-10 | 1979-05-12 | 1979-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-11-10 | 1983-05-12 | 1983-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-11-10 | 1987-05-12 | 1987-11-11 | $7700.00 | Window Closed / Lapsed |