US3909317A
Expired / Lapsed
US
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Formation of abrupt junctions in liquid phase epitaxy
Assignee: Panasonic Holdings Corp
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Filing: 1973-07-30
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Granted: 1975-09-30
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Expires: 1993-07-30
Abstract
Abstract In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.
Inventors
- 👤 Kunio Itoh
- 👤 Morio Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:54
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/063; C30B19/064; C30B19/10; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/025; Y10S148/107; Y10S438/00; Y10S438/914; Y10S438/916
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
125 words
IN A METHOD FOR MANUFACTURING MULTIPLE LAYERS BY LIQUID PHASE EPITAXIAL GROWTH COMPRISING THE STEPS OF CONTACTING A SEMICONDUCTOR SUBSTRATE WITH AT LEAST TWO DIFFERENT SEMICONDUCTOR SOLUTIONS FOR SUBSEQUENT EPITAXIAL GROWTH ON SAID SUBSTRATE, THE IMPROVEMEOT WHICH COMPRISES: AFTER FORMING AN EPITAXIAL GROWTH LAYER ON SAID SUBSTRATE BY CONTACTING IT WITH ONE OF SAID SOLUTIONS AND PRIOR TO FORMING A SUBSEQUENT EPITAXIAL GROWTH LAYER, ANOTHER SOLUTION, WHICH IS SUBSTANTIALLY SATURATED WITH SOLUTE CONTAINED IN SAID SOLUTION WHICH HAS BEEN CONTACTED WITH SAID SUBSTRATE AND WHICH DISSOLVE THE NECESSARY COMPONENT OR COMPONENTS THEREIN AND REMOVES THEM FROM THE FORMER LAYER, CONTACTING SAID FORMER, EPITAXIAL GROWTH LAYER, WHEREIN THE TEMPERATURES OF SAID ANOTHER SOLUTION IS HELD CONSTANT OR RAISED SLIGHTLY DURING THE CONTACTING WITH SAID ANOTHER SOLUTION.
Claim 2
Dependent Claim
125 words
IN A METHOD FOR MANUFACTURING MULTIPLE LAYERS BY LIQUID PHASE EPITAXIAL GROWTH COMPRISING THE STEPS OF CONTACTING A SEMICONDUCTOR SUBSTRATE WITH AT LEAST TWO DIFFERENT SEMICONDUCTOR SOLUTIONS FOR SUBSEQUENT EPITAXIAL GROWTH ON SAID SUBSTRATE, THE IMPROVEMEOT WHICH COMPRISES: AFTER FORMING AN EPITAXIAL GROWTH LAYER ON SAID SUBSTRATE BY CONTACTING IT WITH ONE OF SAID SOLUTIONS AND PRIOR TO FORMING A SUBSEQUENT EPITAXIAL GROWTH LAYER, ANOTHER SOLUTION, WHICH IS SUBSTANTIALLY SATURATED WITH SOLUTE CONTAINED IN SAID SOLUTION WHICH HAS BEEN CONTACTED WITH SAID SUBSTRATE AND WHICH DISSOLVE THE NECESSARY COMPONENT OR COMPONENTS THEREIN AND REMOVES THEM FROM THE FORMER LAYER, CONTACTING SAID FORMER, EPITAXIAL GROWTH LAYER, WHEREIN THE TEMPERATURES OF SAID ANOTHER SOLUTION IS HELD CONSTANT OR RAISED SLIGHTLY DURING THE CONTACTING WITH SAID ANOTHER SOLUTION.
Claim 3
Dependent Claim
31 words
A method of claim 1, wherein the principal face of said semiconductor substrate comprises a component of the III-V group, and said solutions, respectively, comprise semiconductor solutes of the III-V group.
Claim 4
Dependent Claim
46 words
A method of claim 2, wherein the principal face of said semiconductor substrate is of GaAs, both of said at least two different solutions contained Ga, Al and GaAs, and said another solution which is a saturated solution containing Ga and GaAs but substantially excludes Al.
Claim 5
Dependent Claim
25 words
A method of claim 3, wherein the temperature of said another solution is controlled to be not lowered during the contacting with said another solution.
Claim 6
Dependent Claim
25 words
A method of claim 3, wherein the temperature of said another solution is held constant or raised slightly during the contacting with said another substance.
Claim 7
Dependent Claim
25 words
A method of claim 2, wherein the temperature of said another solution is controlled to be not lowered during the contacting with said another solution.
Claim 8
Dependent Claim
41 words
A method of claim 2, wherein the principal face of said semiconductor substrate is of GaAs, both of said at least two different substances contain Ga, Al and GaAs, and said another substance contains Ga and GaAs but substantially excludes Al.
Claim 9
Dependent Claim
25 words
A method of claim 2, wherein the temperature of said another solution is held constant or raised slightly during the contacting with said another substance.
Claim 10
Dependent Claim
25 words
A method of claim 1, wherein the temperature of said another solution is controlled to be not lowered during the contacting with said another solution.
Claim 11
Dependent Claim
31 words
A method of claim 1, wherein the principal face of said semiconductor substrate comprises a component of the III-V group, and said solutions respectively, comprise semiconductor solutes of the III-V group.
Claim 12
Dependent Claim
25 words
A method of claim 1, wherein the temperature of said another solution is held constant or raises slightly during the contacting with said another substance.
Claim 13
Dependent Claim
125 words
In a method for manufacturing a semiconductor device of multiple layers epitaxially grown By liquid phase epitaxial growth wherein a semiconductor substrate is contacted by at least two different semiconductor solutions for sequential epitaxial growth of a layer from each of said solutions, the improvement which comprises, after forming of a first epitaxial growth layer, and prior to forming a second epitaxial growth layer, contacting said first epitaxial growth layer with a semiconductor solution that prevents at least one component in the first epitaxial growth layer from diffusing into the second epitaxial growth layer during formation of said second epitaxial growth layer, whereby a steep slope of concentration of said one component is produced at the junction between the first and second epitaxial grown layers.
Claim 14
Dependent Claim
125 words
In a method for manufacturing a semiconductor device of multiple layers epitaxially grown By liquid phase epitaxial growth wherein a semiconductor substrate is contacted by at least two different semiconductor solutions for sequential epitaxial growth of a layer from each of said solutions, the improvement which comprises, after forming of a first epitaxial growth layer, and prior to forming a second epitaxial growth layer, contacting said first epitaxial growth layer with a semiconductor solution that prevents at least one component in the first epitaxial growth layer from diffusing into the second epitaxial growth layer during formation of said second epitaxial growth layer, whereby a steep slope of concentration of said one component is produced at the junction between the first and second epitaxial grown layers.
Claim 15
Independent Claim
93 words
A method for manufacturing a semiconductor of multiple layers by liquid-phase epitaxial growth comprising the steps of contacting a semiconductor substrate with at least two different liquid-phase substances for subsequent epitaxial growth on said substrate, characterized in that: after forming an epitaxial growth layer with a first of said solutions and prior to forming a subsequent epitaxial growth layer, another solution on which is saturated with a solute of said first solution which dissolves the unnecessary component or components therein and removes them from the former layer, contacts said former epitaxial growth layer.
Claim 16
Independent Claim
93 words
A method for manufacturing a semiconductor of multiple layers by liquid-phase epitaxial growth comprising the steps of contacting a semiconductor substrate with at least two different liquid-phase substances for subsequent epitaxial growth on said substrate, characterized in that: after forming an epitaxial growth layer with a first of said solutions and prior to forming a subsequent epitaxial growth layer, another solution on which is saturated with a solute of said first solution which dissolves the unnecessary component or components therein and removes them from the former layer, contacts said former epitaxial growth layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-29 | 1979-03-31 | 1979-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-29 | 1983-03-31 | 1983-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-29 | 1987-03-31 | 1987-09-30 | $7700.00 | Window Closed / Lapsed |