Patent US3909307A successfully refreshed from Google Patents.
US3909307A
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Process for compensating boundary charges in silicon thin layers epitaxially grown on a substrate
Assignee: Siemens AG
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Filing: 1974-08-19
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Granted: 1975-09-30
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Expires: 1994-08-19
Abstract
Abstract Process for compensating for the presence of boundary charges in semiconductor layers which are grown on a monocrystalline insulating substrate including the step of introducing doping atoms into the region of the boundary charges. The doping atoms can be introduced before any semiconductor has been deposited after a thin layer of the semiconductor has been epitaxially grown on the substrate, or after all of the epitaxial layer has been grown.
Inventors
- 👤 Karl-Ulrich Stein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:55
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/024; Y10S148/053; Y10S148/097; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
33 words
A PROCESS FOR COMPENSATING BOUNDARY CHARGES IN A SEMICONDUCTING LAYER WHICH IS EPITAXIALLY GROWN ON AN INSULATING SUBSTRATE WHICH INCLUDES THE STEP OF INTRODUCING DOPING ATOMS INTO THE REGION OF THE BOUNDARY CHARGES.
Claim 2
Dependent Claim
33 words
A PROCESS FOR COMPENSATING BOUNDARY CHARGES IN A SEMICONDUCTING LAYER WHICH IS EPITAXIALLY GROWN ON AN INSULATING SUBSTRATE WHICH INCLUDES THE STEP OF INTRODUCING DOPING ATOMS INTO THE REGION OF THE BOUNDARY CHARGES.
Claim 3
Dependent Claim
18 words
A process according to claim 1 in which said semiconducting layer is silicon and said substrate is monocrystalline.
Claim 4
Dependent Claim
27 words
A process according to claim 1 in which the doping atoms are introduced into the surface of the substrate prior to the deposition of the epitaxial layer.
Claim 5
Dependent Claim
43 words
A process according to claim 1 in which a first thin semiconducting layer is first epitaxially deposited on said substrate, the doping atoms are introduced through this thin layer and then the remainder of the semiconducting layer is grown over said thin layer.
Claim 6
Dependent Claim
18 words
A process according to claim 4 in which said thin layer has a thickness of about 0.2 micron.
Claim 7
Dependent Claim
31 words
A process according to claim 1 in which said doping atoms are introduced into the region of the boundary charges after the semiconducting layer has been fully deposited on said substrate.
Claim 8
Dependent Claim
15 words
A process according to claim 1 in which said doping atoms are boron or phosphorus.
Claim 9
Dependent Claim
15 words
A process according to claim 1 in which said doping atoms are arsenic or indium.
Claim 10
Dependent Claim
16 words
A process accrding to claim 1 in which said doping atoms are introduced by ion implantation.
Claim 11
Dependent Claim
16 words
A process according to claim 9 in which the implanted ions are activated by heat treatment.
Claim 12
Dependent Claim
18 words
A process according to claim 1 in which the dopants are introduced by means of solid body diffusion.
Claim 13
Dependent Claim
22 words
A process according to claim 11 in which a doped solid body is used as a source for the solid body diffusion.
Claim 14
Dependent Claim
18 words
A process according to claim 12 in which doped silicon dioxide is used as a doped solid body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-29 | 1979-03-31 | 1979-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-29 | 1983-03-31 | 1983-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-29 | 1987-03-31 | 1987-09-30 | $7700.00 | Window Closed / Lapsed |