US3582410A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing metal base semiconductor devices
Assignee: Boeing North American Inc
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Filing: 1969-07-11
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Granted: 1971-06-01
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Expires: 1989-07-11
Abstract
Abstract TWO SINGLE CRYSTAL SEMICONDUCTOR LAYERS OR ONE SINGLE CRYSTAL SEMICONDUCTOR LAYER AND A SINGLE CRYSTAL INSULATING SUBSTRATE ARE PRODUCED IN JUXTAPOSITION WITH EACH OTHER. A CONTROL LAYER, FOR EXAMPLE CONDUCTIVE OR RESISTIVE, IS DIFFUSED ALONG THE INTERFACE BETWEEN THE TWO LAYERS TO CONTROL THE TRANSFER OF ENERGY BETWEEN THE LAYERS.
Inventors
- 👤 Theodore J La Chapelle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:06
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10D; H10D99/00; H10P10/00; H10P10/12; H10P10/128; H10P32/14; H10P32/1408; H10P32/174; H10P32/18; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/059; Y10S148/072; Y10S148/142; Y10S438/00; Y10S438/914; Y10S438/922; Y10S438/968
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-05-31 | 1974-11-30 | 1975-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-05-31 | 1978-11-30 | 1979-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-05-31 | 1982-11-30 | 1983-06-01 | $7700.00 | Window Closed / Lapsed |