US3907607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Continuous processing of ribbon material
Assignee: Corning Glass Works
•
Filing: 1972-05-18
•
Granted: 1975-09-23
•
Expires: 1992-05-18
Abstract
Abstract A method for continuously processing elongated ribbons or webs of materials such as semiconductors, metals or glasses. Both ends of a tubular reaction chamber disposed in a heating system are provided with end caps which accommodate all gas inlet and outlet connections and which act as gas locks. A mixture of reactant and carrier gas enters the furnace through one end cap and leaves the furnace through the other. This furnace may be used for such chemical processes as diffusion, surface oxidation, etching, metallization and other pyrolytic processes.
Inventors
- 👤 Bing C Chu
- 👤 David J Fischer
- 👤 Hans J Kunz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:52
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/545; C30; C30B; C30B31/00; C30B31/06; C30B31/10; C30B31/106; C30B31/12; C30B31/16; C30B33/00; C30B33/005; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/051; Y10S438/00; Y10S438/907
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
100 words
THE METHOD OF CONTINOUSLY PROCESSING RIBBON-LIKE MATERIAL, COMPRISING THE STEPS OF: PASSING SAID MATERIAL THROUGH A FIRST REGION CONTAINING AN INSERT GAS, PASSING SAID MATERIAL THROUGH A FIRST EVACUATION CHAMBER, PASSING SAID MATERIAL THROUGH REGION CONTAINING HOT INERT GAS AT AN ELEVATED TEMPERATURE, THE TRANSFER OF HEAT FROM SAID HOT INERT GAS TO SAID MATERIAL PREHEATING SAID MATERIAL, PASSING SAID MATERIAL THROUGH A REACTION CHAMBER CONTAINING A REACTANT GAS WHEREIN SAID MATERIAL IS HEATED TO A TEMPERATURE SUFFICIENT TO CAUSE SAID REACTANT GAS TO REACT AT THE SURFACE OF SAID MATERIAL, PASSING SAID MATERIAL THROUGH A SECOND EVACUATION CHAMBER, AND
Claim 2
Independent Claim
100 words
THE METHOD OF CONTINOUSLY PROCESSING RIBBON-LIKE MATERIAL, COMPRISING THE STEPS OF: PASSING SAID MATERIAL THROUGH A FIRST REGION CONTAINING AN INSERT GAS, PASSING SAID MATERIAL THROUGH A FIRST EVACUATION CHAMBER, PASSING SAID MATERIAL THROUGH REGION CONTAINING HOT INERT GAS AT AN ELEVATED TEMPERATURE, THE TRANSFER OF HEAT FROM SAID HOT INERT GAS TO SAID MATERIAL PREHEATING SAID MATERIAL, PASSING SAID MATERIAL THROUGH A REACTION CHAMBER CONTAINING A REACTANT GAS WHEREIN SAID MATERIAL IS HEATED TO A TEMPERATURE SUFFICIENT TO CAUSE SAID REACTANT GAS TO REACT AT THE SURFACE OF SAID MATERIAL, PASSING SAID MATERIAL THROUGH A SECOND EVACUATION CHAMBER, AND
Claim 3
Independent Claim
145 words
The method of continuously processing ribbon-like semiconductor material, comprising the steps of: passing said material through a first region containing an inert gas, passing said material through a first evacuation chamber, passing said material through a reaction chamber containing a mixture of dopant and inert carrier gases wherein said material is heated to a temperature sufficient to cause said dopant gas to react at the surface of said material and change the resistivity thereof, passing said material through a second evacuation chamber, passing said material through a second region containing inert gas, measuring the resistivity of said material after said material has passed through said second region, and adjusting the rate of movement of said material in accordance with the measured resistivity of said material to control the period of time during which each unit length of said material is subjected to said dopant gas.
Claim 4
Independent Claim
145 words
The method of continuously processing ribbon-like semiconductor material, comprising the steps of: passing said material through a first region containing an inert gas, passing said material through a first evacuation chamber, passing said material through a reaction chamber containing a mixture of dopant and inert carrier gases wherein said material is heated to a temperature sufficient to cause said dopant gas to react at the surface of said material and change the resistivity thereof, passing said material through a second evacuation chamber, passing said material through a second region containing inert gas, measuring the resistivity of said material after said material has passed through said second region, and adjusting the rate of movement of said material in accordance with the measured resistivity of said material to control the period of time during which each unit length of said material is subjected to said dopant gas.
References Cited (Backward Citations)
US3341376A
Cited
US3349474A
Cited
US3471321A
Cited
US3441454A
Cited
US3397672A
Cited
US3615944A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-22 | 1979-03-24 | 1979-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-22 | 1983-03-24 | 1983-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-22 | 1987-03-24 | 1987-09-23 | $7700.00 | Window Closed / Lapsed |