US3615944A
Expired / Lapsed
US
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Method for the continuous doping of semiconductor materials
Assignee: Corning Glass Works
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Filing: 1968-12-13
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Granted: 1971-10-26
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Expires: 1988-12-13
Abstract
Abstract A method for continuously doping semicondcutor materials whereby the materials are placed in separate chambers which are sequentially exposed to preheating, doping and cooling.
Inventors
- 👤 Henry P Sheng
- 👤 F Thomas Wooten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:53
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/10; C30B31/106; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S118/00; Y10S118/90; Y10S148/00; Y10S148/006; Y10S148/037; Y10S148/049; Y10S438/00; Y10S438/907; Y10S438/909; Y10S438/935
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
26 words
The method of claim 1 wherein said doping is accomplished by Passing a carrier gas containing a dopant into said vessels and over said semiconductor material.
Claim 2
Dependent Claim
14 words
The method of claim 1 further comprising cooling said semiconductor material after said doping.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein said vessels are passed through said heating zone at a constant speed and the temperature profile through said heating zone is maintained substantially constant.
Claim 4
Independent Claim
123 words
A method for continuously doping semiconductor material comprising: placing portions of the semiconductor material in a plurality of vessels, passing said vessels in series through an elongated heating zone containing, in sequence, an initial preheating zone and a heated doping zone, maintained at a higher temperature than the preheating zone, isolating said vessels one from the other during their passage through said zones, and, sequentially preheating said semiconductor material while continuously introducing and withdrawing a substantially nonreactive atmosphere into and from said vessels while in said preheating zone, and doping said semiconductor material in said doping zone by continuously introducing and withdrawing a carrier gas containing a vaporized dopant into and from said vessels, so as to contact and dope said semiconductor material.
Claim 5
Dependent Claim
35 words
The method of claim 5 further comprising, after said doping, cooling said doped semiconductor material by continuously passing a substantially nonreactive atmosphere over said doped semiconductor material while in said vessels in a cooling zone.
Claim 6
Dependent Claim
66 words
The method of claim 5 wherein said substantially nonreactive atmosphere and said carrier gas containing said dopant are continuously introduced into and withdrawn from said vessels by sequentially passing said vessels into temporary fluid communication with the fluid flow path of said substantially nonreactive atmosphere and said carrier gas containing said dopant, said vessels being individually heated in their entirety during said preheating and said doping.
Claim 7
Dependent Claim
30 words
The method of claim 7 wherein said vessels are passed through said heating zone at a constant speed and the temperature profile through said heating zone is maintained substantially constant.
Claim 8
Dependent Claim
28 words
The method of claim 8 wherein said doping is conducted at a temperature in the range of 800* to 1300* C., which is greater than the preheating temperature.
Claim 9
Dependent Claim
34 words
The method of claim 7 wherein said flow path is established by maintaining a vacuum in that portion of the flow path to which said atmosphere and said carrier gas are to be withdrawn.
Claim 10
Dependent Claim
16 words
The method of claim 8 wherein said speed is from 1/32 to 22 inches per minute.
Claim 11
Dependent Claim
14 words
The method of claim 11 wherein said substantially nonreactive atmosphere is an inert gas.
Claim 12
Dependent Claim
17 words
The method of claim 12 wherein said inert gas is nitrogen and said carrier gas is oxygen.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-25 | 1975-04-26 | 1975-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-25 | 1979-04-26 | 1979-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-25 | 1983-04-26 | 1983-10-26 | $7700.00 | Window Closed / Lapsed |