Patent US2669388A successfully refreshed from Google Patents.
Patent US3900350A successfully refreshed from Google Patents.
US3900350A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices in which silicon oxide regions inset in silicon are formed by a masking oxidation, wherein an intermediate layer of polycrystalline silicon is provided between the substrate and the oxidation mask
Assignee: US Philips Corp
•
Filing: 1973-04-04
•
Granted: 1975-08-19
•
Expires: 1993-04-04
Abstract
Abstract The manufacture of semiconductor devices, particularly silicon ICs, employing isolating inset oxides is described. To prevent formation of a projecting oxide beak under an oxidation masking layer, a layer of polycrystalline silicon is provided under the oxidation mask instead of the usual silicon oxide.
Inventors
- 👤 Johannes Arnoldus Appels
- 👤 Wilhelmus Henricus Verkuijlen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/043; Y10S148/085; Y10S148/114; Y10S148/122; Y10S148/151
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
105 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING PROVIDING A SEMICONDUCTOR BODY COMPRISED MAINLY OF A MONOCRYSTALLINE SILICON PORTION, PROVIDING ON THE SURFACE OF THE SEMICONDUCTOR BODY A LAYER OF POLYCRYSTALLINE SILICON MATERIAL PROVIDING ON THE POLYCRYSTALLINE SILICON LAYER A LAYER OF MATERIAL CAPABLE OF MASKING SILICON AGAINST OXIDATION, PATTERNING AT LEAST THE OXIDATION MASKING LAYER TO FORM OPENINGS AT THE AREAS WHERE IT IS DESIRED TO INSET AN OXIDE, AND THEREAFTER OXIDIZING SAID BODY AT THE SAID OPENINGS UNTIL AN INSET OXIDE IS FORMED THAT PENETRATES DOWN INTO THE MONOCRYSTALLINE SILICON POTION TO A DEPTH SUBSTANTIALLY BELOW THAT OF ADJACENT POLYCRYSTALLINE SILICON LAYER PORTIONS.
Claim 2
Independent Claim
105 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING PROVIDING A SEMICONDUCTOR BODY COMPRISED MAINLY OF A MONOCRYSTALLINE SILICON PORTION, PROVIDING ON THE SURFACE OF THE SEMICONDUCTOR BODY A LAYER OF POLYCRYSTALLINE SILICON MATERIAL PROVIDING ON THE POLYCRYSTALLINE SILICON LAYER A LAYER OF MATERIAL CAPABLE OF MASKING SILICON AGAINST OXIDATION, PATTERNING AT LEAST THE OXIDATION MASKING LAYER TO FORM OPENINGS AT THE AREAS WHERE IT IS DESIRED TO INSET AN OXIDE, AND THEREAFTER OXIDIZING SAID BODY AT THE SAID OPENINGS UNTIL AN INSET OXIDE IS FORMED THAT PENETRATES DOWN INTO THE MONOCRYSTALLINE SILICON POTION TO A DEPTH SUBSTANTIALLY BELOW THAT OF ADJACENT POLYCRYSTALLINE SILICON LAYER PORTIONS.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1, wherein the polycrystalline silicon layer is deposited directly on the surface of the monocrystalline silicon portion.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 2, wherein the patterning forms openings also in the polycrystalline layer such that the openings extend down to the monocrystalline silicon.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 2, wherein the masking material consists of silicon nitride.
Claim 6
Dependent Claim
21 words
A method as claimed in claim 2, wherein the layer of polycrystalline silicon has a thickness of at most 3000 A.
Claim 7
Dependent Claim
21 words
A method as claimed in claim 5 wherein the layer of polycrystalline silicon has a thickness of at least 300 A.
Claim 8
Dependent Claim
48 words
A method as claimed in claim 2 wherein silicon is deposited epitaxially, at least partly, on a surface of a substrate body consisting at said surface at least mainly of monocrystalline material, the layer of polycrystalline silicon being provided on the said layer formed by said epitaxial deposition.
Claim 9
Dependent Claim
36 words
A method as set forth in claim 7, wherein the oxidation is continued until the inset oxide penetrates through the epitaxial deposit into contact with semiconductive material of the same type as that of the substrate.
Claim 10
Dependent Claim
38 words
A method as claimed in claim 2, Wherein after the oxidation to form the inset regions of silicon oxide, the layer of the material masking against oxidation and the layer of polycrystalline silicon are eliminated at least partly.
Claim 11
Dependent Claim
30 words
A method as claimed in claim 9, wherein the elimination of the layer of polycrystalline silicon, at least partly, is carried out by converting the polycrystalline silicon into silicon oxide.
Claim 12
Dependent Claim
33 words
A method as claimed in claim 10, wherein the layer obtained from the oxidation of the polycrystalline silicon is used for masking during a subsequent step of local doping of the monocrystalline silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-18 | 1979-02-17 | 1979-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-18 | 1983-02-17 | 1983-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-18 | 1987-02-17 | 1987-08-19 | $7700.00 | Window Closed / Lapsed |