US3755014A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device employing selective doping and selective oxidation
Assignee: US Philips Corp
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Filing: 1971-07-08
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Granted: 1973-08-28
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Expires: 1991-07-08
Abstract
Abstract A method of manufacturing a semiconductor device having an inset oxide pattern and a doped zone which is present below said pattern and does not adjoin the surface. According to the invention, only one thin layer is used which masks both against doping and against oxidation. Via a first window the zone is first provided in said layer after which the window is enlarged and the pattern is formed by an oxidation treatment within the enlarged window, during which oxidation the zone is driven inwards.
Inventors
- 👤 J Appels
- 👤 M Paffen
- 👤 E Kooi
- 👤 P Simons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13; H10W20/00; H10W20/01; H10W20/021; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/085; Y10S148/113; Y10S148/114; Y10S148/117
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
42 words
A method as claimed in claim 1 wherein the semiconductor zone is doped with activators producing in said zone a conductivity type which is opposite to the conductivity type of the semiconductor regions adjoining the inset oxide and surrounding the said zone.
Claim 2
Dependent Claim
44 words
A method as claimed in claim 1 wherein the semiconductor zone is doped with activators producing in said zone the same conductivity type as but a higher doping concentration than that of the semiconductor regions adjoining the inset oxide and surrounding the said zone.
Claim 3
Dependent Claim
66 words
A Method as claimed in claim 1 wherein prior to the oxidizing treatment in which the inset oxide is obtained, at least a part of the semiconductor surface to be oxidized is subjected to a treatment for removing material as a result of which a recess is formed in the surface, after which the resulting recess is at least partly filled by the subsequent oxidizing step.
Claim 4
Dependent Claim
26 words
A method as claimed in claim 4 wherein the recess obtained by etching is substantially entirely filled to obtain a substantially flat surface of the body.
Claim 5
Dependent Claim
48 words
A method as claimed in claim 1 wherein the first aperture is ring-shaped and fully surrounds an island-shaped part of the body surface which is masked against said oxidizing treatment, and at least a semiconductor circuit element is provided at the semiconductor region adjoining said island-shaped surface part.
Claim 6
Dependent Claim
34 words
A method as claimed in claim 6 wherein the inset oxide is provided in the form of a grid pattern which surrounds at least two island-shaped surface parts masked against the said oxidizing treatment.
Claim 7
Dependent Claim
115 words
A method as claimed in claim 7 wherein the starting material is a semiconductor body comprising a layer of a first conductivity type which adjoins the surface and which is at least locally present on a region of a second opposite conductivity type, the oxide pattern being inset in the layer over at least a part of the thickness of said layer, said buried doped zone being of the second conductivity type and being formed by doping with activators of the second conductivity type and adjoining the region of the said second conductivity type and forming an integral region therewith, which integral region, together with the inset oxide, fully bounding island-shaped regions of the layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-27 | 1977-02-26 | 1977-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-27 | 1981-02-26 | 1981-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-27 | 1985-02-26 | 1985-08-28 | $7700.00 | Window Closed / Lapsed |