Temperature compensated voltage reference device

Claim 2

A temperature compensated voltage reference device for monitoring at least a portion of an applied input voltage and providing an output control signal when the applied input voltage reaches a predetermined nonzero level, which reference device comprises: a pair of output terminals; a pair of input terminals to which said input voltage is applied; a source of bias voltage; a bipolar transistor having a base terminal, a collector terminal connected to one of said output terminals, and an emitter terminal connected to the other of said output terminals, which transistor has a temperature dependent junction voltage across its base to emitter junction; a field effect transistor having a gate terminal, a drain terminal connected to said other of said output terminals, and a source terminal connected to the base terminal of said bipolar transistor, which transistor has a temperature dependent bias voltage across its gate to source junction; a biasing means connected across said input terminals and joined to the gate of said field effect transistor to bias the same near a pinched-off condition; and a resistive means connected at one end to said source of bias voltage and connected at an opposite end to the source terminal of said field effect transistor so that current flow through said bipolar transistor is increased when current flow through said field effect transistor decreases, and temperature variations in the bias voltage of said field effect transistor are substantially negated by temperature variations in the junction voltage of said bipolar transistor.

Claim 3

A temperature compensated voltage reference device for monitoring an applied input voltage and providing an output control signal when the applied input voltage reaches a predetermined nonzero level, which device comprises: a pair of output terminals; a pair of input terminals to which said input voltage is applied; a source of bias voltage; a field effect transistor having a gate terminal, a source terminal electrically connected to one of said output terminals, and a drain terminal connected to the other of said output terminals, which transistor has a temperature dependent bias voltage across said gate and source terminals; a biasing means connected across said input terminals and joined to the gate of said field effect trnsistor to bias the same near a pinched-off condition; a junction means connected in series with the gate and source terminals of said field effect transistor and having a first terminal and a second terminal across which a temperature dependent junction voltage exists, which voltage has a temperature dependency substantially equal to that Of said bias voltage across said gate and source terminals to compensate for variations in said bias voltage due to temperature changes.

Claim 4

A temperature compensated voltage reference device for monitoring an applied input voltage and providing an output control signal when the applied input voltage reaches a predetermined nonzero level, which device comprises: a pair of output terminals; a pair of input terminals to which said input voltage is applied; a source of bias voltage; a field effect transistor having a gate terminal, a source terminal electrically connected to one of said output terminals, and a drain terminal connected to the other of said output terminals, which transistor has a temperature dependent bias voltage across said gate and source terminals; a biasing means connected across said input terminals and joined to the gate of said field effect trnsistor to bias the same near a pinched-off condition; a junction means connected in series with the gate and source terminals of said field effect transistor and having a first terminal and a second terminal across which a temperature dependent junction voltage exists, which voltage has a temperature dependency substantially equal to that Of said bias voltage across said gate and source terminals to compensate for variations in said bias voltage due to temperature changes.

Claim 5

A reference device as recited in claim 2 wherein the source terminal of said field effect transistor is connected to said one of said output terminals by a resistive means.

Claim 6

A voltage reference device as recited in claim 2 wherein the output of said device is in response to an electrical change in the source to drain circuit of said field effect transistor.

Claim 7

A voltage reference device as recited in claim 2 wherein said junction means is the base to emitter junction of a bipolar transistor.

Claim 8

A temperature compensated voltage reference device for monitoring at least a portion of an applied input voltage and providing an output control signal when the applied input voltage reaches a predetermined nonzero level, which reference device comprises: a pair of output terminals; a pair of input terminals to which said input voltage is applied; a source of bias voltage; a field effect transistor having a gate terminal, a drain terminal connected to one of said output terminals, and a source terminal, which transistor has a temperature dependent bias voltage across its gate and source terminals; a biasing means connected across said input terminals and joined to the gate of said field effect transistor to bias the same near a pinched-off condition; a junction means having a first terminal and a second terminal across which a temperature dependent forward junction voltage exists, which voltage has a temperature dependency substantially equal to that of said bias voltage across said gate and source terminals and said junction means is connected in series with the gate and source terminals of said field effect transistor so that temperature produced variations in the junction voltage of said junction means oppose similar variations in the bias voltage across the gate and source terminals of said field effect transistor; and a resistive means connected at one end to the other of said output terminals and connected at an opposite end to the source terminal of said field effect transistor so that current flow through said junction means is increased when current flow through said field effect transistor decreases and temperature variations in the bias voltage of said field effect transistor are substantially negated by temperature variations in the junction voltage of said junction means.

Claim 9

A temperature compensated voltage reference device for monitoring at least a portion of an applied input voltage and providing an output control signal when the applied input voltage reaches a predetermined nonzero level, which reference device comprises: a pair of output terminals; a pair of input terminals to which said input voltage is applied; a source of bias voltage; a field effect transistor having a gate terminal, a drain terminal connected to one of said output terminals, and a source terminal, which transistor has a temperature dependent bias voltage across its gate and source terminals; a biasing means connected across said input terminals and joined to the gate of said field effect transistor to bias the same near a pinched-off condition; a junction means having a first terminal and a second terminal across which a temperature dependent forward junction voltage exists, which voltage has a temperature dependency substantially equal to that of said bias voltage across said gate and source terminals and said junction means is connected in series with the gate and source terminals of said field effect transistor so that temperature produced variations in the junction voltage of said junction means oppose similar variations in the bias voltage across the gate and source terminals of said field effect transistor; and a resistive means connected at one end to the other of said output terminals and connected at an opposite end to the source terminal of said field effect transistor so that current flow through said junction means is increased when current flow through said field effect transistor decreases and temperature variations in the bias voltage of said field effect transistor are substantially negated by temperature variations in the junction voltage of said junction means.