Patent US3899557A successfully refreshed from Google Patents.
US3899557A
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Hollow semiconductor bodies and method of producing the same
Assignee: Siemens AG
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Filing: 1973-10-29
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Granted: 1975-08-12
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Expires: 1993-10-29
Abstract
Abstract Hollow semiconductor bodies having an outer surface composed of a doped semiconductor material and an inner surface composed of a pure semiconductor material are formed by sequential deposition from a gaseous thermally decomposable semiconductor compound onto a heated carrier member. The multi-layer hollow semiconductor bodies are directly heatable during diffusion of dopants into semiconductor elements.
Inventors
- 👤 Wolfgang Dietze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:31
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/01; C23C16/22; C30; C30B; C30B31/00; C30B31/06; C30B31/10; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/025; Y10S148/073; Y10S264/00; Y10S264/57
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
141 words
A METHOD OF PRODUCING A DIRECTLY HEATABLE HOLLOW SEMICONDUCTOR BODY FORMED OF AT LEAST TWO DISTINCT LAYERS AND BEING USEFUL IN DIFFIUSION PROCESSES COMPRISING: VAPOR DEPOSITING A CONTINUOUS LAYER OF A FIRST SEMICONDUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND DOPED SILICON ONTO A GRAPHITE CARRIER SURFACE UNTIL A DESIRED THICKNESS THEREOF IS ATTAINED, VAPOR DEPOSITING A CONTINUOUS LAYER OF A SECOND SEMICONDUCTOR MATERIAL SELECTED FROM SAID GROUP ONTO SAID LAYER OF SAID FIRST SEMICONDUCTOR MATERIAL UNTIL A DESIRED THICKNESS THEREOF IS ATTAINED AND A HOLLOW SEMICONDUCTOR BODY IS FORMED ON SAID CARRIER SURFACE, AND REMOVING SAID CARRIER SURFACE WITHOUT DESTROYING SAID LAYERS OF SEMICONDUCTOR MATERIALS: WHEREBY SAID HOLLOW SEMICONDUCTOR BODY HAS AN INNER SURFACE COMPOSED OF ONE OF SAID SEMICONDUCTOR MATERIALS OF SAID GROUP AND HAS AN OUTER SURFACE COMPOSED OF THE OTHER SEMICONDUCTOR MATERIAL OF SAID GROUP.
Claim 2
Independent Claim
141 words
A METHOD OF PRODUCING A DIRECTLY HEATABLE HOLLOW SEMICONDUCTOR BODY FORMED OF AT LEAST TWO DISTINCT LAYERS AND BEING USEFUL IN DIFFIUSION PROCESSES COMPRISING: VAPOR DEPOSITING A CONTINUOUS LAYER OF A FIRST SEMICONDUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND DOPED SILICON ONTO A GRAPHITE CARRIER SURFACE UNTIL A DESIRED THICKNESS THEREOF IS ATTAINED, VAPOR DEPOSITING A CONTINUOUS LAYER OF A SECOND SEMICONDUCTOR MATERIAL SELECTED FROM SAID GROUP ONTO SAID LAYER OF SAID FIRST SEMICONDUCTOR MATERIAL UNTIL A DESIRED THICKNESS THEREOF IS ATTAINED AND A HOLLOW SEMICONDUCTOR BODY IS FORMED ON SAID CARRIER SURFACE, AND REMOVING SAID CARRIER SURFACE WITHOUT DESTROYING SAID LAYERS OF SEMICONDUCTOR MATERIALS: WHEREBY SAID HOLLOW SEMICONDUCTOR BODY HAS AN INNER SURFACE COMPOSED OF ONE OF SAID SEMICONDUCTOR MATERIALS OF SAID GROUP AND HAS AN OUTER SURFACE COMPOSED OF THE OTHER SEMICONDUCTOR MATERIAL OF SAID GROUP.
Claim 3
Dependent Claim
30 words
A method as defined in claim 1 wherein said carrier surface comprises an outer surface of a cylindrical carrier member and said first semiconductor material comprises a pure semiconductor material.
Claim 4
Dependent Claim
31 words
A method as defined in claim 1 wherein said carrier surface comprises an inner surface of a hollow cylindrical carrier member and said first semiconductor material comprises a doped semiconductor material.
Claim 5
Dependent Claim
34 words
A method as defined in claim 1 wherein said doped semiconductor material includes a dopant composed of an easily evaporable compound selected from the group consisting of boron trichloride, arsenic trichloride and phosphorous trichloride.
Claim 6
Dependent Claim
26 words
A method as defined in claim 1 wherein said semiconductor materials are deposited by thermal decomposition of thermally decomposable gaseous semiconductor compounds contacting heated carrier surfaces.
Claim 7
Dependent Claim
39 words
A method as defined in claim 5 wherein a gaseous dopant selected from the group consisting of boron trichloride, arsenic trichloride and phosphorous trichloride is mixed with a thermally decomposable gaseous semiconductor compound to deposit said doped semiconductor material.
Claim 8
Dependent Claim
16 words
A method as defined in claim 5 wherein said thermally decomposable gaseous semiconductor compound is silicochloroform.
Claim 9
Dependent Claim
21 words
A method as defined in claim 1 wherein said layers are each deposited in a thickness of at least 1 mm.
Claim 10
Dependent Claim
26 words
A method as defined in claim 1 wherein said outer surface of the hollow semiconductor body has a specific electrical resistance of about 10 milliohm centimeter.
Claim 11
Independent Claim
153 words
A method of producing a multi-layer hollow semiconductor body comprising: feeding a first gas into contact with a heated graphite carrier surface, said first gas containing a thermally decomposable semiconductor compound which yields a solid semiconductor material selected from the group consisting of silicon and doped silicon as a first layer on said heated surface; discontinuing feed of said first gas when a desired layer thickness of semiconductor material forms on said carrier surface; feeding a second gas into contact with said first layer, said second gas containing a thermally decomposable semiconductor compound which yields a solid semiconductor material different from said first semiconductor material and selected from said group as a second layer on said first layer; discontinuing feeding of said second gas when a desired layer thickness of semiconductor material forms on said first layer; and removing said carrier surface from said layers without destroying the body defined by said layers.
Claim 12
Independent Claim
153 words
A method of producing a multi-layer hollow semiconductor body comprising: feeding a first gas into contact with a heated graphite carrier surface, said first gas containing a thermally decomposable semiconductor compound which yields a solid semiconductor material selected from the group consisting of silicon and doped silicon as a first layer on said heated surface; discontinuing feed of said first gas when a desired layer thickness of semiconductor material forms on said carrier surface; feeding a second gas into contact with said first layer, said second gas containing a thermally decomposable semiconductor compound which yields a solid semiconductor material different from said first semiconductor material and selected from said group as a second layer on said first layer; discontinuing feeding of said second gas when a desired layer thickness of semiconductor material forms on said first layer; and removing said carrier surface from said layers without destroying the body defined by said layers.
Claim 13
Dependent Claim
33 words
A method as defined in claim 10 wherein one of said first and second gases contain a gaseous dopant material selected from the group consisting of boron trichloride, arsenic trichloride and phosphorous trichloride.
Claim 14
Dependent Claim
33 words
A method as defined in claim 10 wherein said thermally decomposable gaseous semiconductor compound in said first and second gas is identical and is selected from the group consisting of SiHCl3 and CH3SiCl3.
Claim 15
Dependent Claim
33 words
A method as defined in claim 12 wherein one of said first and second gases contains a gaseous dopant material selected from the group consisting of boron trichloride, arsenic trichloride and phosphorous trichloride.
Claim 16
Dependent Claim
55 words
A method as defined in claim 10 wherein the thermally decomposable seMiconductor compound in said first gas is selected from the group consisting of SiHCl3 and CH3SiCl3 and the thermally decomposable gaseous semiconductor compound in the second gas is chemically different from the decomposable compound in said first gas and is selected from said group.
References Cited (Backward Citations)
US3438810A
Cited
US3748169A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-11 | 1979-02-10 | 1979-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-11 | 1983-02-10 | 1983-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-11 | 1987-02-10 | 1987-08-12 | $7700.00 | Window Closed / Lapsed |