Patent US3899407A successfully refreshed from Google Patents.
US3899407A
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Method of producing thin film devices of doped vanadium oxide material
Assignee: Multi State Devices Ltd
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Filing: 1973-08-01
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Granted: 1975-08-12
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Expires: 1993-08-01
Abstract
Abstract A method of producing thin film devices of vanadium oxide material consists in reactively sputtering onto a suitable substrate thin films made of a major amount of a vanadium oxide material having a transition temperature of fixed value and a minor amount of a doping material permitting the raising or lowering of the transition temperature of the thin film device respectively above or below such fixed value. The doping material may be selected from the group consisting of tungsten, molybdenum, titanium, niobium, germanium, silicon and carbon.
Inventors
- 👤 H Keith Eastwood
- 👤 Barry A Noval
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:42
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/083; H; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12; H01C7/00; H01C7/04; H01C7/042; H01C7/043; H01C7/047; H01C7/10; H01C7/105; H01C7/108
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
83 words
A METHOD OF PRODUCING THIN FILM DEVICES OF VANADIUM OXIDE MATERIAL HAVING A DESIRED RANSITION TEMPERATURE, CONSISTING IN REACTIVELY SPUTTERING ONTO A SUITABLE SUBSTRATE A THIN FILM CONSISTING ESSENTIALLY OF A VANADIUM OXIDE MATERIAL HAVING A TRANSITION TEMPERATURE OF FIXED VALUE AND FROM 0.05 TO 10 ATOMIC PERCENT OF A SINGLE DOPING ATERIAL SELECTED FROM THE GROUP CONSISTING OF TUNGSTEN, MOLYBDENUM, TITANIUM, NIOBIUM, GERMANIUM, SILICON AND CARBON, PERMITTING THE INCREASE OR DECREASE IN THE TRANSITION TEMPERATURE RESPECTIVELY ABOVE OR BELOW SAID FIXED VALUE.
Claim 2
Independent Claim
83 words
A METHOD OF PRODUCING THIN FILM DEVICES OF VANADIUM OXIDE MATERIAL HAVING A DESIRED RANSITION TEMPERATURE, CONSISTING IN REACTIVELY SPUTTERING ONTO A SUITABLE SUBSTRATE A THIN FILM CONSISTING ESSENTIALLY OF A VANADIUM OXIDE MATERIAL HAVING A TRANSITION TEMPERATURE OF FIXED VALUE AND FROM 0.05 TO 10 ATOMIC PERCENT OF A SINGLE DOPING ATERIAL SELECTED FROM THE GROUP CONSISTING OF TUNGSTEN, MOLYBDENUM, TITANIUM, NIOBIUM, GERMANIUM, SILICON AND CARBON, PERMITTING THE INCREASE OR DECREASE IN THE TRANSITION TEMPERATURE RESPECTIVELY ABOVE OR BELOW SAID FIXED VALUE.
Claim 3
Dependent Claim
47 words
A method as defined in claim 1, wherein the vanadium oxide material is vanadium dioxide and wherein the doping material is germanium of an atomic percent varying from 0.1 to 6, permitting to raise the transition temperature of vanadium dioxide from about 65*C up to about 85*C.
Claim 4
Dependent Claim
48 words
A method as defined in claim 1, wherein the vanadium oxide material is vanadium dioxide and wherein the doping material is tungsten in an amount varying from 0.1 to 1 atomic percent, permitting to lower the transition temperature of vanadium dioxide from about 65*C down to about 55*C.
Claim 5
Dependent Claim
30 words
A method as defined in claim 1, wherein reactive sputtering is done from a composite target made of an alloy of vanadium and a single one of said doping materials.
Claim 6
Dependent Claim
31 words
A method as defined in claim 1, wherein reactive sputtering is done from a composite sintered metal target made of powders of vanadium and a single one of said doping materials.
Claim 7
Dependent Claim
33 words
A method as defined in claim 1, wherein reactive sputtering is done from a composite target made of vanadium metal to which pieces of a single one of said doping materials is attached.
Claim 8
Dependent Claim
33 words
A method as defined in claim 1 wherein said step of reactively sputtering includes simultaneously sputtering vanadium and a single one of said doping materials onto a heated substrate in an oxidizing atmosphere.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-11 | 1979-02-10 | 1979-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-11 | 1983-02-10 | 1983-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-11 | 1987-02-10 | 1987-08-12 | $7700.00 | Window Closed / Lapsed |