Patent US3894792A successfully refreshed from Google Patents.
US3894792A
Expired / Lapsed
US
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Method and device for deflecting light beam
Assignee: Hitachi Ltd
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Filing: 1970-09-16
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Granted: 1975-07-15
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Expires: 1990-09-16
Abstract
Abstract A pn junction layer is formed in a semiconductor body having a forbidden band the width of which is greater than the photon energy of an irradiated light beam. The pn junction is forwardly biased through transparent electrodes provided on the opposite principal surfaces to inject carriers at a concentration of the order of 1018 to 1022 cm 3. The refractive index of the semiconductor body is varied according to the carrier concentration to arbitrarily deflect the incident light beam.
Inventors
- 👤 Kiichi Komatsubara
- 👤 Yasuhiro Shiraki
- 👤 Eizaburo Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:27
CPC Classifications
H; H10; H10P; H10P95/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/21; G02F1/218; G02F1/29; G02F1/292; H10D; H10D62/00; H10D62/80; H10D62/871; H10F; H10F99/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
117 words
A method of deflecting a light beam, comprising the steps of: preparing a semiconductor body having a forbidden band the width of which is greater than the photon energy of light to be deflected, at least one pn junction being arranged in that area of said semiconductor body in which light deflection is desired; disposing said semiconductor body in the path of light to be deflected; and injecting carriers at a concentration of 1018 to 1022 cm 3 into said pn junction arranged in said semiconductor body, in accordance with a desired quantity of light deflection at said pn junction, to thereby cause the light transmitted through said semiconductor body to be deflected in a desired direction.
Claim 2
Independent Claim
117 words
A method of deflecting a light beam, comprising the steps of: preparing a semiconductor body having a forbidden band the width of which is greater than the photon energy of light to be deflected, at least one pn junction being arranged in that area of said semiconductor body in which light deflection is desired; disposing said semiconductor body in the path of light to be deflected; and injecting carriers at a concentration of 1018 to 1022 cm 3 into said pn junction arranged in said semiconductor body, in accordance with a desired quantity of light deflection at said pn junction, to thereby cause the light transmitted through said semiconductor body to be deflected in a desired direction.
Claim 3
Dependent Claim
98 words
A light beam deflecting device comprising: a semiconductor body having a forbidden band the width of which is greater than the photon energy of light to be deflected, at least one pn junction being arranged in that area of said semiconductor body in which light deflection is desired; at least one pair of transparent electrodes disposed opposite to each other on respective p and n type regions of said semiconductor body; and an electric power supply means connected to said transparent electrodes for injecting carriers at a concentration of 1018 to 1022 cm 3 into said pn junction.
Claim 4
Dependent Claim
98 words
A light beam deflecting device comprising: a semiconductor body having a forbidden band the width of which is greater than the photon energy of light to be deflected, at least one pn junction being arranged in that area of said semiconductor body in which light deflection is desired; at least one pair of transparent electrodes disposed opposite to each other on respective p and n type regions of said semiconductor body; and an electric power supply means connected to said transparent electrodes for injecting carriers at a concentration of 1018 to 1022 cm 3 into said pn junction.
Claim 5
Dependent Claim
27 words
A light beam deflecting device according to claim 2, in which said semiconductor is one selected from the group consisting of CdS, CdF2, ZnS, ZnTe and SiC.
Claim 6
Dependent Claim
69 words
A light beam deflecting device according to claim 2, in which said semiconductor body has one pair of mutually parallel principal surfaces, the junction portion of said pn junction is composed of a plurality of stripes extending mutually parallel between opposite side surfaces of said semiconductor body, and said transparent electrodes are disposed opposite to each other on respective p and n type regions of the stripe-shaped pn junctions.
Claim 7
Dependent Claim
86 words
A light beam deflecting device according to claim 2, in which said semiconductor body has one pair of mutually parallel principal surfaces, said pn junction is composed of a group of dot-shaped pn junctions arranged in matrix form composed of columns and rows of pn junctions at a plane in said semiconductor body at a predetermined depth from one of said principal surfaces thereof, and said transparent electrodes are disposed opposite to each other on respective p and n type regions of the dot-shaped pn junctions.
Claim 8
Dependent Claim
95 words
A light beam deflecting device according to claim 2 in which said transparent electrodes are composed of a plurality of first electrodes extending mutually in parallel to the p type regions of one principal surface side of said semiconductor body and a plurality of second electrodes extending mutually in pArallel on the n type regions of the other principal surface side of said semiconductor body, said first and second electrodes composed of columns and rows of a matrix, respectively, to form a plurality of pn junctions at the intersecting portions of said columns and rows.
Claim 9
Dependent Claim
26 words
A light beam deflecting device according to claim 2, in which said semiconductor body has one pair of principal surfaces slanted with respect to each other.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-14 | 1979-01-13 | 1979-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-14 | 1983-01-13 | 1983-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-14 | 1987-01-13 | 1987-07-15 | $7700.00 | Window Closed / Lapsed |