US3271578A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation modulator
Assignee: Motors Liquidation Co
•
Filing: 1963-02-14
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Granted: 1966-09-06
•
Expires: 1983-02-14
Abstract
No abstract record available.
Inventors
- 👤 Robert R Bockemuehl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:33
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/015
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
166 words
APPARATUS FOR MODULATING ELECTROMAGNETIC ENERGY INCLUDING: A SEMICONDUCTOR ELEMENT HAVING AN ABSORPTION EDGE WAVELENGTH, THE ELEMENT BEING THIN ALONG AT LEAST ONE DIMENSION TO BE RELATIVELY TRANSPARENT TO ENERGY DIRECTED ALONG SAID ONE DIMENSION AND WHICH ENERGY IS OF A WAVELENGTH LONGER THAN THE ABSORPTION EDGE WAVELENGTH; A FIRST SOURCE OF ELECTROMAGNETIC ENERGY HAVING A PREDETERMINED WAVELENGTH LONGER THAN THE ABSORPTION EDGE WAVELENGTH AND DISPOSED TO DIRECT RADIATION ONTO THE SEMICONDUCTOR ELEMENT SUBSTANTIALLY ALONG THE ONE DIMENSION; BIASING MEANS TO PRODUCE A DEPLETION LAYER IN THE SEMICONDUCTOR ELEMENT TRANSVERSE TO THE DIRECTION OF THE OUTPUT FROM THE FIRST SOURCE AND HAVING THEREIN A HIGH SPACE CHARGE DENSITY THEREBY TO EFFECTIVELY SHIFT THE ABSORPTION EDGE WAVELENGTH TO A WAVELENGTH LONGER THAN SAID PREDETERMINED WAVELENGTH; AND A SECOND SOURCE OF ELECTROMAGNETIC ENERGY OF A WAVELENGTH SUBSTANTIALLY LONGER THAN SAID PREDETERMINED WAVELENGTH AND POSITIONED TO DIRECT THE OUTPUT THEREOF INTO THE DEPLETION LAYER THEREBY TO SHIFT THE EFFECTIVE ABSORPTION EDGE WAVELENGTH TOWARD A WAVELENGTH SHORTER THAN THE PREDETERMINED WAVELENGTH.
Claim 2
Dependent Claim
166 words
APPARATUS FOR MODULATING ELECTROMAGNETIC ENERGY INCLUDING: A SEMICONDUCTOR ELEMENT HAVING AN ABSORPTION EDGE WAVELENGTH, THE ELEMENT BEING THIN ALONG AT LEAST ONE DIMENSION TO BE RELATIVELY TRANSPARENT TO ENERGY DIRECTED ALONG SAID ONE DIMENSION AND WHICH ENERGY IS OF A WAVELENGTH LONGER THAN THE ABSORPTION EDGE WAVELENGTH; A FIRST SOURCE OF ELECTROMAGNETIC ENERGY HAVING A PREDETERMINED WAVELENGTH LONGER THAN THE ABSORPTION EDGE WAVELENGTH AND DISPOSED TO DIRECT RADIATION ONTO THE SEMICONDUCTOR ELEMENT SUBSTANTIALLY ALONG THE ONE DIMENSION; BIASING MEANS TO PRODUCE A DEPLETION LAYER IN THE SEMICONDUCTOR ELEMENT TRANSVERSE TO THE DIRECTION OF THE OUTPUT FROM THE FIRST SOURCE AND HAVING THEREIN A HIGH SPACE CHARGE DENSITY THEREBY TO EFFECTIVELY SHIFT THE ABSORPTION EDGE WAVELENGTH TO A WAVELENGTH LONGER THAN SAID PREDETERMINED WAVELENGTH; AND A SECOND SOURCE OF ELECTROMAGNETIC ENERGY OF A WAVELENGTH SUBSTANTIALLY LONGER THAN SAID PREDETERMINED WAVELENGTH AND POSITIONED TO DIRECT THE OUTPUT THEREOF INTO THE DEPLETION LAYER THEREBY TO SHIFT THE EFFECTIVE ABSORPTION EDGE WAVELENGTH TOWARD A WAVELENGTH SHORTER THAN THE PREDETERMINED WAVELENGTH.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-05 | 1970-03-07 | 1970-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-05 | 1974-03-07 | 1974-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-05 | 1978-03-07 | 1978-09-06 | $7700.00 | Window Closed / Lapsed |