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Patent US3889284A successfully refreshed from Google Patents.
US3889284A
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US
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Avalanche photodiode with varying bandgap
Assignee: United States Department of the Army
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Filing: 1974-01-15
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Granted: 1975-06-10
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Expires: 1994-01-15
Abstract
Abstract A photodetector for radiation in the 1.0 to 2.5 micrometer region is provided; the photodetector comprising a hybrid material photodiode including a photon absorption material and an avalanche multiplying junction.
Inventors
- 👤 Ernst J Schiel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:46
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
72 words
A PHOTODETECTOR FOR RADIATION IN THE 1.0 TO 2.5 MICROMETER REGION, SAID PHOTODETECTOR COMPRISING A PHOTODIODE INCLUDING TWO ADJACENT REGIONS OF TWO DIFFERENT SEMICONDUCTOR MATERIALS, ONE OF SAID REGIONS COMPRISING A PHOTON ABSORPTION MATERIAL SELECTED FROM THE GROUP CONSISTING OF GAINAS AND INASP AND THE OTHER OF SAID REGIONS COMPRISING A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GAAS, INAS, AND INSB AND CONTAINING AN N-P JUNCTION BIASED IN THE AVALANCHE MODE.
Claim 2
Dependent Claim
72 words
A PHOTODETECTOR FOR RADIATION IN THE 1.0 TO 2.5 MICROMETER REGION, SAID PHOTODETECTOR COMPRISING A PHOTODIODE INCLUDING TWO ADJACENT REGIONS OF TWO DIFFERENT SEMICONDUCTOR MATERIALS, ONE OF SAID REGIONS COMPRISING A PHOTON ABSORPTION MATERIAL SELECTED FROM THE GROUP CONSISTING OF GAINAS AND INASP AND THE OTHER OF SAID REGIONS COMPRISING A MATERIAL SELECTED FROM THE GROUP CONSISTING OF GAAS, INAS, AND INSB AND CONTAINING AN N-P JUNCTION BIASED IN THE AVALANCHE MODE.
Claim 3
Dependent Claim
13 words
A photodetector according to claim 1 wherein the photon absorption material is GaInAs.
Claim 4
Dependent Claim
13 words
A photodetector according to claim 1 wherein the photon absorption material is InAsP.
Claim 5
Dependent Claim
16 words
A photodetector according to claim 1 wherein the material containing the n-p junction is in GaAs.
Claim 6
Dependent Claim
23 words
A photodetector according to claim 1 wherein the photon absorption material is GaInAs and wherein the material containing the n-p junction is GaAs.
Claim 7
Dependent Claim
15 words
A photodetector according to claim 1 wherein the containing the n-p junction material is InP.
Claim 8
Dependent Claim
22 words
A photodector according to claim 1 wherein the photon absorption material is InAsP and the material containing the n-p junction is InP.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-09 | 1978-12-09 | 1979-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-09 | 1982-12-09 | 1983-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-09 | 1986-12-09 | 1987-06-10 | $7700.00 | Window Closed / Lapsed |