Patent US3887994A successfully refreshed from Google Patents.
US3887994A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: International Business Machines Corp
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Filing: 1973-06-29
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Granted: 1975-06-10
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Expires: 1993-06-29
Abstract
Abstract Non-doping ions are implanted in the electrode layer of a semiconductor to reduce contamination of the electrode layer by mobile ions. The dosage of the ions is selected to prevent an increase in the fast surface state density when the ions are implanted. The energy level at which the ions are implanted is controlled to position all of the implanted ions within the electrode layer.
Inventors
- 👤 San-Mei Ku
- 👤 Charles A Pillus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10P; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/45; H10W20/48; Y; Y10; Y10S; Y10S257/00; Y10S257/913; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
75 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SUBSTITUTE OF A SEMICONDUCTOR MATERIAL WITH AN INSULATING LAYER THEREON AND A METAL FILM OVERLYING THE INSULATING LAYER AND IN CONTACT WITH AT LEAST ONE PORTION OF THE SUBSTRATE TO FORM AN ELECTRODE LAYER INCLUDING THE STEPS OF: IMPLANTING IONS INTO THE METAL FILM; SELECTING THE IONS FROM THE GROUP CONSISTING OF HYDROGEN, HELIUM, SILICON, NEON, ARGON, CARBON, ALUMINUM, NITGOGEN, OXYGEN, COPPER, GOLD, XENON, AND KRYPTON;
Claim 2
Independent Claim
75 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SUBSTITUTE OF A SEMICONDUCTOR MATERIAL WITH AN INSULATING LAYER THEREON AND A METAL FILM OVERLYING THE INSULATING LAYER AND IN CONTACT WITH AT LEAST ONE PORTION OF THE SUBSTRATE TO FORM AN ELECTRODE LAYER INCLUDING THE STEPS OF: IMPLANTING IONS INTO THE METAL FILM; SELECTING THE IONS FROM THE GROUP CONSISTING OF HYDROGEN, HELIUM, SILICON, NEON, ARGON, CARBON, ALUMINUM, NITGOGEN, OXYGEN, COPPER, GOLD, XENON, AND KRYPTON;
Claim 3
Dependent Claim
21 words
The method according to claim 1 in which the semiconductor material is silicon and the metal film includes at least aluminum.
Claim 4
Dependent Claim
46 words
The method according to claim 2 including: removing portions of the metal film to form at least one electrode layer prior to implantation of the ions in the metal film; and controlling the implantation of the ions to implant the ions only in the electrode layer.
Claim 5
Dependent Claim
28 words
The method according to claim 3 in which control of implantation of the ions only in the electrode layer is accomplished by directing the ions through a mask.
Claim 6
Dependent Claim
33 words
The method according to claim 4 including annealing the metal film after ion implantation at a temperature at which all damage to the lattice structure created by implanting the ions is not removed.
Claim 7
Dependent Claim
15 words
The method according to claim 2 in which the metal film consists of only aluminum.
Claim 8
Dependent Claim
24 words
The method according to claim 2 in which the metal film includes any of the group consisting of aluminum, copper, and aluminum with copper.
Claim 9
Dependent Claim
12 words
The method according to claim 2 in which the ions are hydrogen.
Claim 10
Dependent Claim
46 words
The method according to claim 1 including: removing portions of the metal film to form at least one electrode layer prior to implantation of the ions in the metal film; and controlling the implantation of the ions to implant the ions only in the electrode layer.
Claim 11
Dependent Claim
27 words
The method according to claim 9 in which control of implantation of the ions only in the electrode layer is by directing the ions through a mask.
Claim 12
Dependent Claim
16 words
The method according to claim 1 in which the semiconductor device is a field effect transistor.
Claim 13
Dependent Claim
12 words
The method according to claim 1 in which the ions are hydrogen.
Claim 14
Dependent Claim
33 words
The method according to claim 1 including annealing the metal film after ion implantation at a temperature at which all damage to the lattice structure created by implanting the ions is not removed.
References Cited (Backward Citations)
US3515956A
Cited
US3600797A
Cited
US3736192A
Cited
US3747203A
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US3682729A
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US3756861A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-09 | 1978-12-09 | 1979-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-09 | 1982-12-09 | 1983-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-09 | 1986-12-09 | 1987-06-10 | $7700.00 | Window Closed / Lapsed |