Abstract A simultaneous double diffusion method wherein a coating containing a silicon oxide and the oxides of a plurality of conductivity-determining impurities having different diffusivity rates is formed on the surface of a semiconductor substrate using a temperature at which substantially no diffusion of the impurities into the substrate will take place. Then, the substrate is heated to simultaneously diffuse the impurities into the substrate to form a plurality of abutting regions in the substrate separated by junctions. The sequence of regions in distance, with respect to the substrate surface, is controlled by the diffusivity rates of the selected conductivity-determining impurities. The coating may be a single layer or a plurality of layers, at least two of which contain different conductivitydetermining impurities.
A SEMICONDUCTOR STRUCTURE COMPRISING: A SEMICONDUCTOR SUBSTRATE, A FIRST SILICON OXIDE ON A SURFACE OF SAID SUBSTRATE COMPRISING THE OXODE OF A FIRST-TYPE CONDUCTIVITYDETERMING IMPURITY, AND ONE OR MORE ADDITIONAL SILICON OXIDE LAYERS, AT LEAST ONE OF SAID ADDITIONAL LAYERS CONTAINING THE OXIDE OF AN OPPOSITETYPE CONDUCTIVITY-DETERMINING IMPURITY, SAID FIRST-TYPE AND SAID OPPOSITE-TYPE IMPURITIES HAVING DIFFERENT DIFFUSIVITY RATES IN THE SEMICONDUCTOR SUBSTRATE, THE CONCENTRATION OF THE OXIDE OF SAID FIRST-TYPE CONDUCTIVITY-DETERMINING IMPURITY AND THE CONCENTRATION OF THE OXIDE OF SAID OPPOSITE-TYPE CONDUCTIVITY-DETERMINING IMPURITY BEING SUCH THAT UPON HEATING AT DIFFUSION TEMPERATURES IN THE ORDER OF 1050*C, REGIONS OF SAID FIRSTTYPE AND SAID OPPOSITE-TYPE CONDUCTIVITY RESPECTIVELY
Claim 2
Dependent Claim
105 words
A SEMICONDUCTOR STRUCTURE COMPRISING: A SEMICONDUCTOR SUBSTRATE, A FIRST SILICON OXIDE ON A SURFACE OF SAID SUBSTRATE COMPRISING THE OXODE OF A FIRST-TYPE CONDUCTIVITYDETERMING IMPURITY, AND ONE OR MORE ADDITIONAL SILICON OXIDE LAYERS, AT LEAST ONE OF SAID ADDITIONAL LAYERS CONTAINING THE OXIDE OF AN OPPOSITETYPE CONDUCTIVITY-DETERMINING IMPURITY, SAID FIRST-TYPE AND SAID OPPOSITE-TYPE IMPURITIES HAVING DIFFERENT DIFFUSIVITY RATES IN THE SEMICONDUCTOR SUBSTRATE, THE CONCENTRATION OF THE OXIDE OF SAID FIRST-TYPE CONDUCTIVITY-DETERMINING IMPURITY AND THE CONCENTRATION OF THE OXIDE OF SAID OPPOSITE-TYPE CONDUCTIVITY-DETERMINING IMPURITY BEING SUCH THAT UPON HEATING AT DIFFUSION TEMPERATURES IN THE ORDER OF 1050*C, REGIONS OF SAID FIRSTTYPE AND SAID OPPOSITE-TYPE CONDUCTIVITY RESPECTIVELY
Claim 3
Dependent Claim
11 words
The structure of claim 1 wherein said semiconductor substrate is silicon.
Claim 4
Dependent Claim
12 words
The structure of claim 2 wherein said silicon oxide is silicon dioxide.