Dielectric isolation process

Abstract

Abstract A method of epitaxially depositing onto a semiconductor substrate by planarizing the deposition surface of the substrate substantially parallel to a predetermined crystallographic plane, forming a deposition mask which exposes a predetermined site on the surface of the substrate, and epitaxially depositing semiconductor material in a preferred growth direction at the exposed site to produce a monocrystalline structure. A plurality of sites may be exposed through the deposition mask to permit formation of a plurality of discrete monocrystalline structures having predetermined spacing. Layers of different conductivity types can be formed in the structures by selective doping during deposition. Monocrystalline structures formed by the above method may be coated with a dielectric material and further processed to produce semiconductor devices for use in integrated circuits. If the monocrystalline structures are suitably arrayed and of a different conductivity type than the substrate, thus yielding semiconductor diodes, they can be utilized as a target in a vidicon tube.

Inventors

• 👤 Kenneth Elwood Bean

Bibliographic Details