US3881244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a solid state inductor
Assignee: Texas Instruments Inc
•
Filing: 1973-08-03
•
Granted: 1975-05-06
•
Expires: 1993-08-03
Abstract
Abstract Disclosed is a solid state inductor which is formed in a monocrystalline semiconductor body. An electrically isolated helix comprised of conductive studs selectively interconnected by electrical contacts circumscribes an electrically isolated core material. Typically the studs are comprised of the semiconductor slice material, or are deposited conductor. Also disclosed is an integrated circuit having such solid state inductor therein.
Inventors
- 👤 Don Leslie Kendall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:16
CPC Classifications
H; H10; H10D; H10D84/00; G; G11; G11B; G11B5/00; G11B5/127; G11B5/17; H01; H01F; H01F17/00; H01F17/0006; H01F17/0033; H01F27/00; H01F27/40; H01F41/00; H01F41/02; H01F41/04; H01F41/041; H01F41/046; H10P; H10P95/00; H01F2017/0086; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/4902
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
116 words
The method of forming a semiconductor inductor from a semiconductor body having first and second surfaces comprising the steps of: a. forming a plurality of selectively spaced parallel grooves in said first surface to provide at least first and second rows of semicondutor material between said grooves, b. selectively removing portions of siad first and second rows to provide studs in said first and second rows, c. depositing a core material of one permeability between said first and second rows of semiconductor studs, d. lapping said lower surface to remove said semiconductor body between said second surface and said grooves, and e. selectively electrically interconnecting said semiconductor studs in a helix configuration circumventing said core material.
Claim 2
Independent Claim
116 words
The method of forming a semiconductor inductor from a semiconductor body having first and second surfaces comprising the steps of: a. forming a plurality of selectively spaced parallel grooves in said first surface to provide at least first and second rows of semicondutor material between said grooves, b. selectively removing portions of siad first and second rows to provide studs in said first and second rows, c. depositing a core material of one permeability between said first and second rows of semiconductor studs, d. lapping said lower surface to remove said semiconductor body between said second surface and said grooves, and e. selectively electrically interconnecting said semiconductor studs in a helix configuration circumventing said core material.
Claim 3
Dependent Claim
16 words
The method of making a semiconductor inductor of claim 1, wherein said semiconductor body comprises silicon.
Claim 4
Dependent Claim
22 words
The method of making an inductor of claim 2 wherein said semiconductor studs have sidewalls lying substantially in the (110) crystallographic plane.
Claim 5
Independent Claim
84 words
The method of forming a semiconductor from a semiconductor body having first and second surfaces comprising the steps of: a. selectively removing portions of said first surface to provide first and second rows of studs extending substantially to said second surface; b. circumfusing said first and second row of studs with a circumfusing material c. removing the portion of said semiconductor body between said second surface and the base of said studs; and d. selectively electrically interconnecting said semiconductor studs in a helix configuration.
Claim 6
Independent Claim
84 words
The method of forming a semiconductor from a semiconductor body having first and second surfaces comprising the steps of: a. selectively removing portions of said first surface to provide first and second rows of studs extending substantially to said second surface; b. circumfusing said first and second row of studs with a circumfusing material c. removing the portion of said semiconductor body between said second surface and the base of said studs; and d. selectively electrically interconnecting said semiconductor studs in a helix configuration.
Claim 7
Dependent Claim
41 words
The method of making an inductor according to claim 4 and further including the step of depositing a core material between said first and second rows of semiconductors studs such that said step of selectively electrically interconnecting circumvents said core material.
References Cited (Backward Citations)
US3300832A
Cited
US3553533A
Cited
US3381369A
Cited
US3561110A
Cited
US3638156A
Cited
US3731005A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-05 | 1978-11-04 | 1979-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-05 | 1982-11-04 | 1983-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-05 | 1986-11-04 | 1987-05-06 | $7700.00 | Window Closed / Lapsed |