Patent US3879619A successfully refreshed from Google Patents.
US3879619A
Expired / Lapsed
US
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Mosbip switching circuit
Assignee: International Business Machines Corp
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Filing: 1973-06-26
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Granted: 1975-04-22
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Expires: 1993-06-26
Abstract
Abstract A MOSFET-bipolar switching circuit is disclosed which exhibits the characteristics of impedance mismatch between input and output, simple biasing requirements, high speed, and low standby power. In one embodiment, an N channel MOSFET is connected to provide a shunt feedback path from the collector to the base of an NPN bipolar transistor. A similar circuit results in the combination of a PNP bipolar transistor and a P channel MOSFET. In another embodiment, a pair of complementary MOSFET''s are employed to drive a pair of complementary bipolar transistors. The circuit can be used either as a driver or for logic and may be fabricated in high density, integrated circuits.
Inventors
- 👤 Peter Pleshko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:47
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/567
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
231 words
A high speed switching circuit comprising: a first bipolar transistor having an emitter, a collector and a base, a first metal oxide semiconductor field effect transistor of like conductivIty type as said first bipolar transistor, said metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said first bipolar transistor and said source electrode being connected to the base of said first bipolar transistor to provide collector to base feedback for said first bipolar transistor, a second, opposite conductivity type bipolar transistor having an emitter, a collector and a base, a second, opposite conductivity type metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said second bipolar transistor and said source electrode being connected to the base of said second bipolar transistor to provide collector to base feedback for said second bipolar transistor, biasing means connected across said emitter and collector of said first bipolar transistor and across said collector and emitter of said second bipolar transistor in series to provide an operating voltage, input means connected directly to the gate electrodes of said first and second metal oxide semiconductor field effect transistors, and output means connected directly to the collectors of said first and second bipolar transistors.
Claim 2
Dependent Claim
231 words
A high speed switching circuit comprising: a first bipolar transistor having an emitter, a collector and a base, a first metal oxide semiconductor field effect transistor of like conductivIty type as said first bipolar transistor, said metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said first bipolar transistor and said source electrode being connected to the base of said first bipolar transistor to provide collector to base feedback for said first bipolar transistor, a second, opposite conductivity type bipolar transistor having an emitter, a collector and a base, a second, opposite conductivity type metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said second bipolar transistor and said source electrode being connected to the base of said second bipolar transistor to provide collector to base feedback for said second bipolar transistor, biasing means connected across said emitter and collector of said first bipolar transistor and across said collector and emitter of said second bipolar transistor in series to provide an operating voltage, input means connected directly to the gate electrodes of said first and second metal oxide semiconductor field effect transistors, and output means connected directly to the collectors of said first and second bipolar transistors.
Claim 3
Dependent Claim
231 words
A high speed switching circuit comprising: a first bipolar transistor having an emitter, a collector and a base, a first metal oxide semiconductor field effect transistor of like conductivIty type as said first bipolar transistor, said metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said first bipolar transistor and said source electrode being connected to the base of said first bipolar transistor to provide collector to base feedback for said first bipolar transistor, a second, opposite conductivity type bipolar transistor having an emitter, a collector and a base, a second, opposite conductivity type metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said second bipolar transistor and said source electrode being connected to the base of said second bipolar transistor to provide collector to base feedback for said second bipolar transistor, biasing means connected across said emitter and collector of said first bipolar transistor and across said collector and emitter of said second bipolar transistor in series to provide an operating voltage, input means connected directly to the gate electrodes of said first and second metal oxide semiconductor field effect transistors, and output means connected directly to the collectors of said first and second bipolar transistors.
Claim 4
Dependent Claim
231 words
A high speed switching circuit comprising: a first bipolar transistor having an emitter, a collector and a base, a first metal oxide semiconductor field effect transistor of like conductivIty type as said first bipolar transistor, said metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said first bipolar transistor and said source electrode being connected to the base of said first bipolar transistor to provide collector to base feedback for said first bipolar transistor, a second, opposite conductivity type bipolar transistor having an emitter, a collector and a base, a second, opposite conductivity type metal oxide semiconductor field effect transistor having a source electrode, a drain electrode and a gate electrode, said drain electrode being connected to the collector of said second bipolar transistor and said source electrode being connected to the base of said second bipolar transistor to provide collector to base feedback for said second bipolar transistor, biasing means connected across said emitter and collector of said first bipolar transistor and across said collector and emitter of said second bipolar transistor in series to provide an operating voltage, input means connected directly to the gate electrodes of said first and second metal oxide semiconductor field effect transistors, and output means connected directly to the collectors of said first and second bipolar transistors.
Claim 5
Dependent Claim
57 words
A high speed switching circuit as defined in claim 1 wherein said first bipolar transistor is a PNP transistor and said first metal oxide semiconductor field effect transistor is a P channel transistor and wherein said second bipolar transistor is an NPN transistor and said second metal oxide semiconductor field effect transistor is an N channel transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-21 | 1978-10-21 | 1979-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-21 | 1982-10-21 | 1983-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-21 | 1986-10-21 | 1987-04-22 | $7700.00 | Window Closed / Lapsed |