Semiconductor circuits exhibiting nshaped transconductance characteristic utilizing unipolar field effect and bipolar transistors

Claim 1

AN ELECTRICAL CIRCUIT COMPRISING IN COMBINATION, A COMPOSITE SEMICONDUCTOR DEVICE HAVING A NONLINEAR TRANSCONDUCTANCE CHARACTERISTIC INCLUDING FIRST AND SECOND NEGATIVE TRANSCONDUCTANCE REGIONS SEPARATED BY A POSITIVE TRANSCONDUCTANCE REGION AND EXHIBITING ZERO TRANSCONDUCTANCE POINTS BETWEEN SAID NEGATIVE AND SAID POSITIVE TRANSCONDUCTANCE REGIONS, SAID COMPOSITE SEMICONDUCTOR DEVICE INCLUDING, A FIELD EFFECT TRANSISTOR HAVING GATE, SOURCE AND DRAIN ELECTRODES, A BIPOLAR TRANSISTOR HAVING BASE, COLLECTOR AND EMITTER ELECTRODES, MEANS COUPLING THE DRAIN AND SOURCE ELECTRODES OF SAID FIELD EFFECT TRANSISTOR TO THE COLLECTOR AND BASE ELECTRODES RESPECTIVELY OF SAID BIPOLAR TRANSISTOR, AND MEANS FOR COUPLING A BIASING SOURCE BETWEEN SAID GATE ELECTRODE OF SAID FIELD EFFECT TRANSISTOR AND SAID EMITTER ELECTRODE OF SAID BIPOLAR TRANSISTOR TO BIAS SAID COMPOSITE SEMICONDUCTOR DEVICE AT ONE OF SAID NEGATIVE AND POSITIVE TRANSCONDUCTANCE REGIONS.