Thin film resistor crossovers for integrated circuits

Claim 1

An integrated circuit including a thin film resistor comprising: a silicon substrate; a first dielectric layer overlying said substrate and adherent thereto; said thin film resistor in the form of a strip of electrical resistance material having substantially uniform thickness in the range of 200-300 angstroms and substantially uniform width throughout its length, overlying said first dielectric layer and adherent thereto; a second dielectric layer of substantially uniform thickness in the range of 1,000-3,000 angstroms overlying said thin film resistor intermediate the length thereof and adherent thereto, and having a substantially uniform width slightly greater than that of said thin film resistor to overlie said first dielectric layer in adherent relationship therewith at both sides of said thin film resistor, and said second dielectric layer having a length shorter than that of said thin film resistor to expose the end portions thereof; and a plurality of substantially parallel spaced apart electrically conductive strips extending transversely across said thin film resistor, two of said conductive strips overlying and in adherent electrical contact with the respective ends of said thin film resistor, and a further one of said plurality of conductive strips overlying said second dielectric layer and adherent thereto to form a conductive crossover for interconnecting desired points of said integrated circuit while electrically insulated from said thin film resistor, each of said conductive strips extending beyond the sides of said thin film resistor in direct adherent overlying relationship with said first dielectric layer thereat.