Crossover for large scale arrays

Claim 1

The method for producing the microcircuit array of claim 1 wherein the first conductor which is interrupted above the dielectric layer is provided with extensions which overlap portIons of the dielectric layer on either side of the second conductor.

Claim 5

The method of forming crossovers in a microcircuit hybrid array which consists of the steps of depositing a layer of aluminum on a substrate, applying a layer of photoresist to the aluminized substrate, developing portions of the photoresist through a conductor pattern mask, etching the layer of aluminum to produce a metallic conductor pattern on the substrate, said conductor pattern at points of conductor crossover having first conductors continuous through the points of conductor crossing and second conductors interrupted on either side of the points of conductor crossing, stripping the remaining photoresist from the patterned substrate, depositing layers of insulative material at the points on the metallic conductor pattern where conductor crossovers are required, depositing a second layer of aluminum over the patterned substrate, applying a layer of photoresist to said substrate, developing portions of the photoresist through a second conductor pattern mask, etching the second aluminum layer to produce a second conductor pattern superimposed over the first conductor pattern and insulative layers, said second conductor pattern at points of conductor crossover having continuous conductors surmounting the insulative layers and joining the interrupted second conductors of the first conductor pattern, thereby causing said second conductors of the first conductor pattern to be continuous above the insulative layers for producing conductor crossovers, the first conductors of the crossover being continuous below the insulative layers and the second conductors of said crossovers being continuous above the insulative layers, and stripping the remaining photoresist to produce a finished array.